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dc.contributor.author정재경-
dc.date.accessioned2020-10-27T00:19:09Z-
dc.date.available2020-10-27T00:19:09Z-
dc.date.issued2019-11-
dc.identifier.citationInternational Conference on Display Technology, v. 50, no. 51, Page. 71-74en_US
dc.identifier.issn0097-966X-
dc.identifier.urihttps://onlinelibrary.wiley.com/doi/abs/10.1002/sdtp.13391-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/154939-
dc.description.abstractThe required carrier mobility of metal oxide thin‐film transistors (TFTs) has been increasing rapidly to meet the demands of the ultra‐high‐resolution, large panel size and three dimensional visual effects as a megatrend of flat panel display. However, the typical field‐effect mobility of IGZO TFTs in the practical production line is less than 10 cm2/Vs, which is still not enough to drive the high‐end flat panel displays with ≥ 300 ppi, more than 60 inch and high frame rate ( ≥ 240 Hz). Approaches to improve the mobility of electron carriers in metal oxide TFT would involve the optimization of cation composition, stacked channel structure and the lattice ordering‐induced crystallization. In this paper, we presented our recent efforts toward the high performance and good reliability, which included the non‐IGZO composition, double channel structure such as ZTO/IZO and ZTO/ITO, the metal‐induced crystallization at a low temperature, and atomic layer deposited IGZO TFTs.en_US
dc.description.sponsorshipThis work was supported by the industrial strategic technology development program funded by MKE/KEIT under grants 10079974 and Samsung research funding center for future technology through Samsung Electronicsen_US
dc.language.isoenen_US
dc.publisherWileyen_US
dc.subjectIGZOen_US
dc.subjecthigh mobilityen_US
dc.subjectdouble-channelen_US
dc.subjectthin-film transistoren_US
dc.titleAdvanced Process and Structure for High Performance Oxide Thin‐Film Transistorsen_US
dc.typeArticleen_US
dc.relation.volume50-
dc.identifier.doi10.1002/sdtp.13391-
dc.relation.page71-74-
dc.contributor.googleauthorJeong, Jae Kyeong-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidjkjeong1-
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COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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