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dc.contributor.author김태환-
dc.date.accessioned2020-10-20T00:59:05Z-
dc.date.available2020-10-20T00:59:05Z-
dc.date.issued2019-10-
dc.identifier.citationIEEE ELECTRON DEVICE LETTERS, v. 40, no. 10, Page. 1610-1613en_US
dc.identifier.issn0741-3106-
dc.identifier.issn1558-0563-
dc.identifier.urihttps://ieeexplore.ieee.org/document/8802266-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/154661-
dc.description.abstractSimulating synaptic function and building brain-inspired computers have received widespread attention. The memristor is considered to be an electronic version of the synapse and an excellent element for creating a brand-new artificial intelligence system in the future. However, most memristor-based electronic synapses currently exhibit low stability due to complex resistance switching processes. Based on a controllable in-situ formation strategy that we were able to employ with atomic layer deposition, we fabricated electronic synapses based on Au@Al2O3 core-shell nanoparticles. Our device exhibited extremely reliable, stable, and durable performance and showed a capability to emulate biological synaptic behavior, including synaptic plasticity, long-term depression (LTD), long-term potentiation (LTP), amplitude dependence, and frequency dependence. This research provides a strategy for manufacturing highly-reliable electronic synapses for neuromorphic applications.en_US
dc.description.sponsorshipThis work was supported in part by the National Natural Science Foundation of China under Grant U1605244, in part by the National Key Research and Development Program of China under Grant 2016YFB0401600, and in part by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology under Grant 2019R1A2B5B03069968. The review of this letter was arranged by Editor B. S. Doyle.en_US
dc.language.isoenen_US
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INCen_US
dc.subjectElectronic synapseen_US
dc.subjectAu nanoparticleen_US
dc.subjectmemristoren_US
dc.subjectartificial intelligenceen_US
dc.subjectatomic layer depositionen_US
dc.subjectin-situ formationen_US
dc.titleHighly Reliable Electronic Synapse Based on Au@Al2O3 Core-Shell Nanoparticles for Neuromorphic Applicationsen_US
dc.typeArticleen_US
dc.relation.no10-
dc.relation.volume40-
dc.identifier.doi10.1109/LED.2019.2934895-
dc.relation.page1610-1613-
dc.relation.journalIEEE ELECTRON DEVICE LETTERS-
dc.contributor.googleauthorMa, Fumin-
dc.contributor.googleauthorXu, Zhongwei-
dc.contributor.googleauthorLiu, Yang-
dc.contributor.googleauthorZheng, Yueting-
dc.contributor.googleauthorChen, Wei-
dc.contributor.googleauthorHu, Hailong-
dc.contributor.googleauthorGuo, Tailiang-
dc.contributor.googleauthorLi, Fushan-
dc.contributor.googleauthorWu, Chaoxing-
dc.contributor.googleauthorKim, Tae Whan-
dc.relation.code2019003487-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidtwk-
dc.identifier.orcidhttps://orcid.org/0000-0001-6899-4986-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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