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dc.contributor.author배석주-
dc.date.accessioned2020-10-08T05:17:56Z-
dc.date.available2020-10-08T05:17:56Z-
dc.date.issued2019-10-
dc.identifier.citationIEEE ACCESS, v. 7, Page. 143160-143168en_US
dc.identifier.issn2169-3536-
dc.identifier.urihttps://ieeexplore.ieee.org/document/8854071-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/154474-
dc.description.abstractThe needs for continuous size reduction of metal-oxide-semiconductor field effect transistor (MOSFET) devices can cause serious reliability concerns. In particular, gate oxide breakdown is a key mechanism concerning the lifetimes of MOSFET devices. In this paper, several spatial point processes are employed to represent general patterns of defect generation in gate oxide. By defining oxide breakdown as a creation of conduction path connecting two oxide interfaces by overlapped defects, percolation models are discussed to predict reliability of MOSFET devices in terms of critical defect density. In the final, we proposed a method to evaluate lifetimes of area-scaled gate oxides in MOSFET devices mainly through their fractal structure. The method suggests an easy way to predict the lifetimes of the devices with area-scaled gate oxides by examining their fractal structure through a fractal dimension without involving breakdown distributions of gate oxides with different areas.en_US
dc.description.sponsorshipThe work of S.-J. Kim was supported in part by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education under Grant 2017R1D1A1B03032543. The work of S. J. Bae was supported in part by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education under Grant 2018R1D1A1A09083149.en_US
dc.language.isoenen_US
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INCen_US
dc.subjectFractal structureen_US
dc.subjectoxide breakdownen_US
dc.subjectpercolation modelen_US
dc.subjectspatial point processen_US
dc.subjecttime-dependent dielectric breakdownen_US
dc.titleReliability Prediction of Highly Scaled MOSFET Devices via Fractal Structure of Spatial Defectsen_US
dc.typeArticleen_US
dc.relation.volume7-
dc.identifier.doi10.1109/ACCESS.2019.2944955-
dc.relation.page143160-143168-
dc.relation.journalIEEE ACCESS-
dc.contributor.googleauthorKim, Seong-Joon-
dc.contributor.googleauthorKim, Man Soo-
dc.contributor.googleauthorBae, Suk Joo-
dc.relation.code2019036307-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF INDUSTRIAL ENGINEERING-
dc.identifier.pidsjbae-
dc.identifier.orcidhttps://orcid.org/0000-0002-9938-7406-


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