Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김은규 | - |
dc.date.accessioned | 2020-09-18T01:16:03Z | - |
dc.date.available | 2020-09-18T01:16:03Z | - |
dc.date.issued | 2019-09 | - |
dc.identifier.citation | NANOMATERIALS, v. 9, no. 9, Page. 1278-1284 | en_US |
dc.identifier.issn | 2079-4991 | - |
dc.identifier.uri | https://www.mdpi.com/2079-4991/9/9/1278 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/153982 | - |
dc.description.abstract | We demonstrated p-type conduction in MoS2 grown with phosphorous pentoxide via chemical vapor deposition (CVD). Monolayer MoS2 with a triangular shape and 15-mu m grains was confirmed by atomic force microscopy. The difference between the Raman signals of the A(1g) and E-2g(1) modes for both the pristine and P-doped samples was 19.4 cm(-1). In the X-ray photoelectron spectroscopy results, the main core level peaks of P-doped MoS2 downshifted by about 0.5 eV to a lower binding energy compared to the pristine material. Field-effect transistors (FETs) fabricated with the P-doped monolayer MoS2 showed p-type conduction with a field-effect mobility of 0.023 cm(2)/V.s and an on/off current ratio of 10(3), while FETs with the pristine MoS2 showed n-type behavior with a field-effect mobility of 29.7 cm(2)/V.s and an on/off current ratio of 10(5). The carriers in the FET channel were identified as holes with a concentration of 1.01 x 10(11) cm(-2) in P-doped MoS2, while the pristine material had an electron concentration of 6.47 x 10(11) cm(-2). | en_US |
dc.description.sponsorship | This research was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIP) (NRF-2016R1A2B4011706, NRF-2018R1A2A3074921). | en_US |
dc.language.iso | en | en_US |
dc.publisher | MDPI | en_US |
dc.subject | chemical vapor deposition | en_US |
dc.subject | P2O5 | en_US |
dc.subject | p-type conduction | en_US |
dc.subject | P-doped MoS2 | en_US |
dc.title | Characteristics of p-Type Conduction in P-Doped MoS2 by Phosphorous Pentoxide during Chemical Vapor Deposition | en_US |
dc.type | Article | en_US |
dc.relation.no | 9 | - |
dc.relation.volume | 9 | - |
dc.identifier.doi | 10.3390/nano9091278 | - |
dc.relation.page | 1278-1284 | - |
dc.relation.journal | NANOMATERIALS | - |
dc.contributor.googleauthor | Lee, Jae Sang | - |
dc.contributor.googleauthor | Park, Chang-Soo | - |
dc.contributor.googleauthor | Kim, Tae Young | - |
dc.contributor.googleauthor | Kim, Yoon Sok | - |
dc.contributor.googleauthor | Kim, Eun Kyu | - |
dc.relation.code | 2019041326 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF NATURAL SCIENCES[S] | - |
dc.sector.department | DEPARTMENT OF PHYSICS | - |
dc.identifier.pid | ek-kim | - |
dc.identifier.orcid | https://orcid.org/0000-0003-3373-963X | - |
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