Characteristics of p-Type Conduction in P-Doped MoS2 by Phosphorous Pentoxide during Chemical Vapor Deposition
- Title
- Characteristics of p-Type Conduction in P-Doped MoS2 by Phosphorous Pentoxide during Chemical Vapor Deposition
- Author
- 김은규
- Keywords
- chemical vapor deposition; P2O5; p-type conduction; P-doped MoS2
- Issue Date
- 2019-09
- Publisher
- MDPI
- Citation
- NANOMATERIALS, v. 9, no. 9, Page. 1278-1284
- Abstract
- We demonstrated p-type conduction in MoS2 grown with phosphorous pentoxide via chemical vapor deposition (CVD). Monolayer MoS2 with a triangular shape and 15-mu m grains was confirmed by atomic force microscopy. The difference between the Raman signals of the A(1g) and E-2g(1) modes for both the pristine and P-doped samples was 19.4 cm(-1). In the X-ray photoelectron spectroscopy results, the main core level peaks of P-doped MoS2 downshifted by about 0.5 eV to a lower binding energy compared to the pristine material. Field-effect transistors (FETs) fabricated with the P-doped monolayer MoS2 showed p-type conduction with a field-effect mobility of 0.023 cm(2)/V.s and an on/off current ratio of 10(3), while FETs with the pristine MoS2 showed n-type behavior with a field-effect mobility of 29.7 cm(2)/V.s and an on/off current ratio of 10(5). The carriers in the FET channel were identified as holes with a concentration of 1.01 x 10(11) cm(-2) in P-doped MoS2, while the pristine material had an electron concentration of 6.47 x 10(11) cm(-2).
- URI
- https://www.mdpi.com/2079-4991/9/9/1278https://repository.hanyang.ac.kr/handle/20.500.11754/153982
- ISSN
- 2079-4991
- DOI
- 10.3390/nano9091278
- Appears in Collections:
- COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
- Files in This Item:
- Characteristics of p-Type Conduction in P-Doped MoS2 by Phosphorous Pentoxide during Chemical Vapor Deposition.pdfDownload
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