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Combination-Encoding Content-Addressable Memory With High Content Density

Title
Combination-Encoding Content-Addressable Memory With High Content Density
Author
정두석
Keywords
Content-addressable memory; combination-encoding content-addressable memory; resistance switch; crossbar array; content density
Issue Date
2019-09
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE ACCESS, v. 7, Page. 137620-137628
Abstract
Recently, resistance switch-based content-addressable memory (RCAM) has been proposed as an alternative to the mainstream static random-access memory-based CAM because of its high integration potential and low static energy consumption. However, RCAM has a lower data density due to the use of a pair of resistance switches for a single bit of contents (0.5 bit/switch) than resistive random access memory (1 bit/switch). In this paper, we propose a new type of RCAM referred to as combination-encoding CAM (CECAM). In the N-CECAM, a single unit consists of N high and N low resistance state switches whose combination collectively represents binary contents, yielding a data density of approximately 0.85 bit/switch when N = 10, for instance. The key to the CECAM is the encoding of an n-bit search key as a 2N-digit key and its decoding. To this end, we propose a simple algorithm for encoding and decoding and its implementation in digital circuitry.
URI
https://ieeexplore.ieee.org/document/8843881https://repository.hanyang.ac.kr/handle/20.500.11754/153903
ISSN
2169-3536
DOI
10.1109/ACCESS.2019.2942150
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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