Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | 김재균 | - |
dc.contributor.author | 맹서현 | - |
dc.date.accessioned | 2020-08-28T16:47:52Z | - |
dc.date.available | 2020-08-28T16:47:52Z | - |
dc.date.issued | 2020-08 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/152952 | - |
dc.identifier.uri | http://hanyang.dcollection.net/common/orgView/200000438183 | en_US |
dc.description.abstract | We investigated the electrical properties and operational stability of amorphous indium-tin-zinc-oxide (a-ITZO) thin-films transistors (TFTs). We fabricated the a-ITZO TFTs using deposition by radio frequency sputtering at room temperature followed by a rapid thermal annealing (RTA) process at different temperatures and oxygen pressure (PO2). This is a more practical annealing route compared to a conventional furnace. Based on film densification and oxygen vacancy optimization, the a-ITZO TFTs exhibited 9.8 cm2/Vs, 0.82 V/decade and 1.39 V, for saturation mobility, sub-threshold swing and threshold voltage, respectively. Operation stability tests and hysteresis behavior of a-ITZO TFTs suggest that oxygen vacancy concentration of a-ITZO thin films gradually decreases under higher PO2, consequently affecting the threshold voltage and the shift seen after a gate bias stress test. This observation suggests that gate bias stress and hysteresis stability of an a-ITZO device is due to the effect of oxygen-controlled pressure in the RTA process. This a-ITZO TFTs electrical characterization qualitatively coincides with X-ray photoelectron spectroscopic analyses of oxygen vacancy concentration in a-ITZO thin films. Thus, our systematic a-ITZO thin film optimization using the oxygen-ambient RTA process is a practical basis for high-performance amorphous oxide semiconductor TFTs’ post-annealing methods. | - |
dc.publisher | 한양대학교 | - |
dc.title | Investigation of Electrical Performance and Operational Stability of Sputtered InSnZnO (ITZO) Thin Film Transistors | - |
dc.title.alternative | RF 마그네트론 스퍼터링으로 증착한 InSnZnO 박막 트랜지스터의 전기적 특성 및 동작 안정성 연구 | - |
dc.type | Theses | - |
dc.contributor.googleauthor | Seohyun Maeng | - |
dc.contributor.alternativeauthor | 맹서현 | - |
dc.sector.campus | S | - |
dc.sector.daehak | 대학원 | - |
dc.sector.department | 나노광전자학과 | - |
dc.description.degree | Master | - |
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