Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박인성 | - |
dc.date.accessioned | 2020-08-19T01:53:27Z | - |
dc.date.available | 2020-08-19T01:53:27Z | - |
dc.date.issued | 2019-07 | - |
dc.identifier.citation | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v. 97, Page. 85-90 | en_US |
dc.identifier.issn | 1369-8001 | - |
dc.identifier.issn | 1873-4081 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S136980011832208X?via%3Dihub | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/152339 | - |
dc.description.abstract | A thin inert metal layer of Ru or Au was inserted between a ZnO insulator and ITO bottom electrode to enhance the crystallinity of the ZnO layer and hence to improve on/off current ratio of the ZnO-based resistor by changing between high resistance state and low resistance state. The ZnO/metal/ITO/PET stacks were semi-transparent when the inserted-metals were 5 nm-thick Ru and 10 nm-thick Au, or less. The ZnO films deposited on metal/amorphous-ITO became crystallized whereas the ZnO films on amorphous-ITO kept pristine amorphous phase. The Al/crystallized-ZnO/metal/ITO/PET resistors showed improved resistive switching characteristics, such as a high on/off current ratio from 1.7 to 27.6 (for Ru) and from 1.6 to 7.1 (for Au) as measured at -1 V, compared with that of Al/amorphous-ZnO/ITO/PET resistors. We concluded that the crystallized-ZnO film deposited on 20-nm-thick Ru showed acceptable resistive switching characteristics to distinguish on and off current. | en_US |
dc.description.sponsorship | This work was supported by Basic Science Research Program (2012R1A6A1029029), Nano Material Technology Development Program (2016M3A7B4910429), and Creative Materials Discovery Program on Creative Multilevel Research Center (2015M3D1A1068061) through the National Research Foundation of Korea NRF funded by the Ministry of Education and the Ministry of Science and ICT. | en_US |
dc.language.iso | en | en_US |
dc.publisher | ELSEVIER SCI LTD | en_US |
dc.subject | ZnO thin film | en_US |
dc.subject | Metal thin layer | en_US |
dc.subject | Crystallization | en_US |
dc.subject | Resistive switching | en_US |
dc.title | Crystallized ZnO films by inserting the inert metal on ITO and their improved on/off current performance | en_US |
dc.type | Article | en_US |
dc.relation.volume | 97 | - |
dc.identifier.doi | 10.1016/j.mssp.2019.03.014 | - |
dc.relation.page | 85-90 | - |
dc.relation.journal | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | - |
dc.contributor.googleauthor | Lee, Taehoon | - |
dc.contributor.googleauthor | Park, In-Sung | - |
dc.contributor.googleauthor | Jung, Yong Chan | - |
dc.contributor.googleauthor | Seong, Sejong | - |
dc.contributor.googleauthor | Kim, Seon Yong | - |
dc.contributor.googleauthor | Ahn, Jinho | - |
dc.relation.code | 2019001608 | - |
dc.sector.campus | S | - |
dc.sector.daehak | RESEARCH INSTITUTE[S] | - |
dc.sector.department | INSTITUTE OF NANO SCIENCE AND TECHNOLOGY | - |
dc.identifier.pid | parkis77 | - |
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