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dc.contributor.author박인성-
dc.date.accessioned2020-08-19T01:53:27Z-
dc.date.available2020-08-19T01:53:27Z-
dc.date.issued2019-07-
dc.identifier.citationMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v. 97, Page. 85-90en_US
dc.identifier.issn1369-8001-
dc.identifier.issn1873-4081-
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S136980011832208X?via%3Dihub-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/152339-
dc.description.abstractA thin inert metal layer of Ru or Au was inserted between a ZnO insulator and ITO bottom electrode to enhance the crystallinity of the ZnO layer and hence to improve on/off current ratio of the ZnO-based resistor by changing between high resistance state and low resistance state. The ZnO/metal/ITO/PET stacks were semi-transparent when the inserted-metals were 5 nm-thick Ru and 10 nm-thick Au, or less. The ZnO films deposited on metal/amorphous-ITO became crystallized whereas the ZnO films on amorphous-ITO kept pristine amorphous phase. The Al/crystallized-ZnO/metal/ITO/PET resistors showed improved resistive switching characteristics, such as a high on/off current ratio from 1.7 to 27.6 (for Ru) and from 1.6 to 7.1 (for Au) as measured at -1 V, compared with that of Al/amorphous-ZnO/ITO/PET resistors. We concluded that the crystallized-ZnO film deposited on 20-nm-thick Ru showed acceptable resistive switching characteristics to distinguish on and off current.en_US
dc.description.sponsorshipThis work was supported by Basic Science Research Program (2012R1A6A1029029), Nano Material Technology Development Program (2016M3A7B4910429), and Creative Materials Discovery Program on Creative Multilevel Research Center (2015M3D1A1068061) through the National Research Foundation of Korea NRF funded by the Ministry of Education and the Ministry of Science and ICT.en_US
dc.language.isoenen_US
dc.publisherELSEVIER SCI LTDen_US
dc.subjectZnO thin filmen_US
dc.subjectMetal thin layeren_US
dc.subjectCrystallizationen_US
dc.subjectResistive switchingen_US
dc.titleCrystallized ZnO films by inserting the inert metal on ITO and their improved on/off current performanceen_US
dc.typeArticleen_US
dc.relation.volume97-
dc.identifier.doi10.1016/j.mssp.2019.03.014-
dc.relation.page85-90-
dc.relation.journalMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING-
dc.contributor.googleauthorLee, Taehoon-
dc.contributor.googleauthorPark, In-Sung-
dc.contributor.googleauthorJung, Yong Chan-
dc.contributor.googleauthorSeong, Sejong-
dc.contributor.googleauthorKim, Seon Yong-
dc.contributor.googleauthorAhn, Jinho-
dc.relation.code2019001608-
dc.sector.campusS-
dc.sector.daehakRESEARCH INSTITUTE[S]-
dc.sector.departmentINSTITUTE OF NANO SCIENCE AND TECHNOLOGY-
dc.identifier.pidparkis77-
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RESEARCH INSTITUTE[S](부설연구소) > ETC
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