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Layered deposition of SnS2 grown by atomic layer deposition and its transport properties

Title
Layered deposition of SnS2 grown by atomic layer deposition and its transport properties
Author
설원제
Keywords
tin disulfide; post-transition metal dichalcogenides; two-dimensional materials; atomic layer deposition; field effect transistor
Issue Date
2019-10
Publisher
IOP PUBLISHING LTD
Citation
NANOTECHNOLOGY, v. 30, no. 40, article no. 405707
Abstract
In this work, we report on the layered deposition of few-layer tin disulfide (SnS2) using atomic layer deposition (ALD). By varying the ALD cycles it was possible to deposit poly-crystalline SnS2 with small variation in layer numbers. Based on the ALD technique, we developed the process technology growing few-layer crystalline SnS2 film (3–6 layers) and we investigated their electrical properties by fabricating bottom-gated thin film transistors using the ALD SnS2 as the transport channel. SnS2 devices showed typical n-type characteristic with on/off current ratio of ~8.32 × 106, threshold voltage of ~2 V, and a subthreshold swing value of 830 mV decade−1 for the 6 layers SnS2. The developed SnS2 ALD technique may aid the realization of two-dimensional SnS2 based flexible and wearable devices.
URI
https://iopscience.iop.org/article/10.1088/1361-6528/ab2d89https://repository.hanyang.ac.kr/handle/20.500.11754/152091
ISSN
0957-4484; 1361-6528
DOI
10.1088/1361-6528/ab2d89
Appears in Collections:
RESEARCH INSTITUTE[S](부설연구소) > ETC
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