Layered deposition of SnS2 grown by atomic layer deposition and its transport properties
- Title
- Layered deposition of SnS2 grown by atomic layer deposition and its transport properties
- Author
- 설원제
- Keywords
- tin disulfide; post-transition metal dichalcogenides; two-dimensional materials; atomic layer deposition; field effect transistor
- Issue Date
- 2019-10
- Publisher
- IOP PUBLISHING LTD
- Citation
- NANOTECHNOLOGY, v. 30, no. 40, article no. 405707
- Abstract
- In this work, we report on the layered deposition of few-layer tin disulfide (SnS2) using atomic layer deposition (ALD). By varying the ALD cycles it was possible to deposit poly-crystalline SnS2 with small variation in layer numbers. Based on the ALD technique, we developed the process technology growing few-layer crystalline SnS2 film (3–6 layers) and we investigated their electrical properties by fabricating bottom-gated thin film transistors using the ALD SnS2 as the transport channel. SnS2 devices showed typical n-type characteristic with on/off current ratio of ~8.32 × 106, threshold voltage of ~2 V, and a subthreshold swing value of 830 mV decade−1 for the 6 layers SnS2. The developed SnS2 ALD technique may aid the realization of two-dimensional SnS2 based flexible and wearable devices.
- URI
- https://iopscience.iop.org/article/10.1088/1361-6528/ab2d89https://repository.hanyang.ac.kr/handle/20.500.11754/152091
- ISSN
- 0957-4484; 1361-6528
- DOI
- 10.1088/1361-6528/ab2d89
- Appears in Collections:
- RESEARCH INSTITUTE[S](부설연구소) > ETC
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