Fast Semiconductor-Metal Bidirectional Transition by Flame Chemical Vapor Deposition

Abstract

A simple yet powerful flame chemical vapor deposition technique is proposed that allows free control of the surface morphology, microstructure, and composition of existing materials with regard to various functionalities within a short process time (in seconds) at room temperature and atmospheric pressure as per the requirement. Since the heat energy is directly transferred to the material surface, the redox periodically converges to the energy dynamic equilibrium depending on the energy injection time; therefore, bidirectional transition between the semiconductor/metal is optionally available. To demonstrate this, a variety of Sn-based particles were created on preformed SnO2 nanowires, and this has been interpreted as a new mechanism for the response and response times of gas-sensing, which are representative indicators of the most surface-sensitive applications and show one-to-one correspondence between theoretical and experimental results. The detailed technologies derived herein are clearly influential in both research and industry.