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dc.contributor.author김현우-
dc.date.accessioned2020-08-05T06:29:42Z-
dc.date.available2020-08-05T06:29:42Z-
dc.date.issued2019-07-
dc.identifier.citationACS OMEGA, v. 4, no. 7, Page. 11824-11831en_US
dc.identifier.issn2470-1343-
dc.identifier.urihttps://pubs.acs.org/doi/10.1021/acsomega.9b01112-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/152051-
dc.description.abstractA simple yet powerful flame chemical vapor deposition technique is proposed that allows free control of the surface morphology, microstructure, and composition of existing materials with regard to various functionalities within a short process time (in seconds) at room temperature and atmospheric pressure as per the requirement. Since the heat energy is directly transferred to the material surface, the redox periodically converges to the energy dynamic equilibrium depending on the energy injection time; therefore, bidirectional transition between the semiconductor/metal is optionally available. To demonstrate this, a variety of Sn-based particles were created on preformed SnO2 nanowires, and this has been interpreted as a new mechanism for the response and response times of gas-sensing, which are representative indicators of the most surface-sensitive applications and show one-to-one correspondence between theoretical and experimental results. The detailed technologies derived herein are clearly influential in both research and industry.en_US
dc.description.sponsorshipThis research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2017R1A6A3A11030900 and 2016R1A6A1A03013422). We are grateful to Jiye Kim, Mun Young Koh, Baro Jin, Ha Jin Na, and Koh Eun Na for their cordiality and hospitality during the course of this research.en_US
dc.language.isoenen_US
dc.publisherAMER CHEMICAL SOCen_US
dc.subjectSNO2 NANOWIRESen_US
dc.subjectGASen_US
dc.subjectFUNCTIONALIZATIONen_US
dc.subjectPERFORMANCEen_US
dc.subjectCHEMISTRYen_US
dc.subjectCATALYSISen_US
dc.subjectARRAYSen_US
dc.titleFast Semiconductor-Metal Bidirectional Transition by Flame Chemical Vapor Depositionen_US
dc.typeArticleen_US
dc.relation.no7-
dc.relation.volume4-
dc.identifier.doi10.1021/acsomega.9b01112-
dc.relation.page11824-11831-
dc.relation.journalACS OMEGA-
dc.contributor.googleauthorChoi, Myung Sik-
dc.contributor.googleauthorNa, Han Gil-
dc.contributor.googleauthorBang, Jae Hoon-
dc.contributor.googleauthorOum, Wansik-
dc.contributor.googleauthorChoi, Sun-Woo-
dc.contributor.googleauthorKim, Sang Sub-
dc.contributor.googleauthorKim, Hyoun Woo-
dc.contributor.googleauthorJin, Changhyun-
dc.relation.code2019037582-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidhyounwoo-
dc.identifier.researcherIDAAH-2115-2020-
dc.identifier.orcidhttps://orcid.org/0000-0002-6118-9914-
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COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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