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dc.contributor.author안일신-
dc.date.accessioned2020-04-13T00:25:40Z-
dc.date.available2020-04-13T00:25:40Z-
dc.date.issued2004-06-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS Part 1, v. 43, No. 6B, Page. 3695–3699en_US
dc.identifier.issn0021-4922-
dc.identifier.urihttps://iopscience.iop.org/article/10.1143/JJAP.43.3695-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/149391-
dc.description.abstractThe Monte-Carlo method is adopted to define the roughness of the mask structure. A random surface height variation described by power spectral density for the rough surfaces of an extreme ultraviolet (EUV) mask is redefined in order to calculate the field in the image plane. A general explicit formula of the scattering, which is analogous to Feynman's approach, is derived, and it is adapted to the EUV mask structure to evaluate the effect of the surface roughness of the side wall of the mask topography on the image formation. The multiple random scattering problems are dealt with the different pattern types, which are an isolated pattern and a dense pattern, in order to compare field variations in phase and amplitude with the ideal flat surface.en_US
dc.language.isoen_USen_US
dc.publisherThe Japan Society of Applied Physicsen_US
dc.subjectMonte-Carlo methoden_US
dc.subjectEUV masken_US
dc.subjectmultiple scatteringen_US
dc.subjectside wallen_US
dc.subjectroughnessen_US
dc.subjectabsorberen_US
dc.subjectbufferen_US
dc.titleEffect of Extreme Ultraviolet Light Scattering from the Rough Absorber and Buffer Side Wallen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.43.3695-
dc.relation.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES &-
dc.contributor.googleauthorKwon, Yeong-Keun-
dc.contributor.googleauthorSim, Sang-Jin-
dc.contributor.googleauthorKim, Jong-Hoi-
dc.contributor.googleauthorCha, Byung-Cheol-
dc.contributor.googleauthorPark, Seung-Wook-
dc.contributor.googleauthorAn, Ilsin-
dc.contributor.googleauthorOh, Hye-keun-
dc.relation.code2012204500-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E]-
dc.sector.departmentDEPARTMENT OF PHOTONICS AND NANOELECTRONICS-
dc.identifier.pidilsin-


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