시뮬레이션 모델을 이용한 AlGaN/GaN 구조의 전자 전송 특성에 관한 연구

Abstract

Wide-bandgap semiconductors that exhibit high electron saturation velocities are especially useful for high frequency, high power applications. Because of the large bandgap of the III-Nitride and their relative thermal and chemical stability, these materials are excellent candidates for use in high power electronics operating in harsh environments. In this research, measurements of AlGaN/GaN heterostructure field effect transistor grown on SiC were carried out with various method(DC-IV, Pulsed-IV, EBIC). Electrical characteristics are backed by combined electrical and thermal simulation using by APSYS(commercial software). APSYS uses the finite difference method to self-consistently solve the Schr?dinger and Poisson equations and heat flow equation considered with self-heating. These results are approximately matched measurement results. The peak electron concentration in this quasi-2DEG is excess of 1e19 [cm-3]. At the edge of the gate electrode, temperature rises by up to ~200K over ambient under the most aggressive drive conditions examined.