AlGaSb, In:AlAsSb 에피레이어의 Deep Level Trap 분석에 관한 연구

Abstract

Electron traps in AlGaSb ( In:AlAsSb ) / (GaSb/InSb QDs) / AlSb layers grown hetero epitaxially by MBE on Si(100) substrates have been characterized using DLTS for vertical Schottky diodes. We made good schottky diodes of this samples. The measurements are performed on diodes AlGaSb layer and InSb QD layer and under AlSb layers by different measure bias. Three hole traps and one electron trap are detected in the AlGaSb. One Two electron traps are detected in InSb QD layer. And two electron traps are detected in AlSb. And two hole traps and one electron trap are detected in In:AlAsSb layer. From DLTS signals of different In composition sample, we observed that DLTS signal effect of In composition.