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The Extraction of Develop Parameters by Using Cross-Sectional Critical Shape Error Method

Title
The Extraction of Develop Parameters by Using Cross-Sectional Critical Shape Error Method
Author
오혜근
Keywords
Lithography; CCSE; development; develop parameter; chemically amplified resist; SEM; CHEMICALLY AMPLIFIED RESIST; LITHOGRAPHY SIMULATION
Issue Date
2004-06
Publisher
The Japan Society of Applied Physics
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1, v. 43, No. 6B, Page. 3692-3694
Abstract
As the minimum feature size decreases, the gap between real experimental lithography process and simulated one increases. This gap should be reduced as small as possible by inserting the correct process parameters to simulation. Unfortunately, we do not have the exact simulation parameters in most cases and we need to get more accurate parameters. Among many methods to obtain the exact parameters, we used a new automatic cross-sectional critical shape error method to get the develop parameters by comparing the experimental scanning electron microscope image with the simulated image. This new bitmap masking technique is much faster than the conventional serial cross-sectional critical shape error method.
URI
https://iopscience.iop.org/article/10.1143/JJAP.43.3692https://repository.hanyang.ac.kr/handle/20.500.11754/145930
ISSN
0021-4922
DOI
10.1143/JJAP.43.3692
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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