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dc.contributor.author오혜근-
dc.date.accessioned2020-04-06T08:16:15Z-
dc.date.available2020-04-06T08:16:15Z-
dc.date.issued2004-06-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS PART 1, v. 43, No. 6B, Page. 3692-3694en_US
dc.identifier.issn0021-4922-
dc.identifier.urihttps://iopscience.iop.org/article/10.1143/JJAP.43.3692-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/145930-
dc.description.abstractAs the minimum feature size decreases, the gap between real experimental lithography process and simulated one increases. This gap should be reduced as small as possible by inserting the correct process parameters to simulation. Unfortunately, we do not have the exact simulation parameters in most cases and we need to get more accurate parameters. Among many methods to obtain the exact parameters, we used a new automatic cross-sectional critical shape error method to get the develop parameters by comparing the experimental scanning electron microscope image with the simulated image. This new bitmap masking technique is much faster than the conventional serial cross-sectional critical shape error method.en_US
dc.description.sponsorshipThe authors appreciate Samsung Electronics for providing their SEM image. This work was supported by the research fund of Hanyang University.en_US
dc.language.isoen_USen_US
dc.publisherThe Japan Society of Applied Physicsen_US
dc.subjectLithographyen_US
dc.subjectCCSEen_US
dc.subjectdevelopmenten_US
dc.subjectdevelop parameteren_US
dc.subjectchemically amplified resisten_US
dc.subjectSEMen_US
dc.subjectCHEMICALLY AMPLIFIED RESISTen_US
dc.subjectLITHOGRAPHY SIMULATIONen_US
dc.titleThe Extraction of Develop Parameters by Using Cross-Sectional Critical Shape Error Methoden_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.43.3692-
dc.relation.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES &-
dc.contributor.googleauthorKim, Hyoung-Hee-
dc.contributor.googleauthorPark, Jun-Tack-
dc.contributor.googleauthorChoi, Jung-Wook-
dc.contributor.googleauthorAn, Ilsin-
dc.contributor.googleauthorOh, Hye-Keun-
dc.relation.code2012204500-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E]-
dc.sector.departmentDEPARTMENT OF APPLIED PHYSICS-
dc.identifier.pidhyekeun-
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