Effect of Carbonization in Bias-Enhanced Nucleation Step during Highly-Oriented Growth of Diamond Films on 6H-SiC(0001) Substrate
- Title
- Effect of Carbonization in Bias-Enhanced Nucleation Step during Highly-Oriented Growth of Diamond Films on 6H-SiC(0001) Substrate
- Author
- 박진석
- Keywords
- 6H-SiC; Bias-Enhanced Nucleation; Carbonization; Diamond Film
- Issue Date
- 2004-06
- Publisher
- TRANS TECH PUBLICATIONS LTD
- Citation
- MATERIALS SCIENCE FORUM, v. 457-460, Page. 321-324
- Abstract
- We present experimental results regarding the growth of highly-oriented diamond films on 6H-SiC substrates using a BEN (Bias-Enhanced Nucleation) process with carbonization. A microwave plasma-assisted CVD system is used. The effect of methane concentration on the carburization step is considered. For all grown films, Raman spectra, XRD patterns, and SEM morphologies are discussed in terms of the growth conditions. Micro-Raman, SEM and XRD results show that, by lowering the CH4/H-2 ratio in the carbonization step, the Raman quality factor(f(q)) increases to approximately 90.7 % while the crystal orientation is changed from random to (I I I)-orientation.
- URI
- https://repository.hanyang.ac.kr/handle/20.500.11754/141933https://www.scientific.net/MSF.457-460.321
- ISSN
- 0255-5476; 1662-9760; 1662-9752
- DOI
- 10.4028/www.scientific.net/MSF.457-460.321
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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