높은 일함수를 갖는 금속 나노 돗을 사용한 전하 저장 낸드 플래시 메모리 연구

Abstract

The potential of “discrete-trap” storage mechanisms to solve the scaling limitations of present Flash memory cells is evaluated based on experiment, covering both performance and reliability aspects. The low voltage write/erase and retention performances of FePt-NDs flash memory devices using SiO2 as tunnel and control oxides make them suitable for non-volatile memory applications. This study report indicated that new non-volatile memory with extremely high density FePt-NDs memory was proposed and fundamental characteristics of the FePt-NDs memory were evaluated. FePt-NDs film is used as a charge retention layer in the FePt-NDs memory. The FePt-NDs film consists of the thin oxide film that dispersively includes high density metal dots with Nano-scale. The FePt-NDs film is formed by using sputtering technique with a special sputtering target. The size and the density of the FePt-NDs in the film are typically 2 nm and around ~1.2x1013/cm2, respectively, which were superior to that of ~ Si or Ge or W and Co quantum dot memory. Non-volatile memory operation at a relatively below ~10 V voltage and 103 endurance characteristic were confirmed in the FePt-NDs memory fabricated according to the conventional MOS process. From these experimental results, we expect that this FePt-NDs device using the FN-tunneling method can be a candidate for the future nonvolatile memory.