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Polarization retention in Pb(Zr0.4Ti0.6)O3 capacitors with IrO2 top electrodes

Title
Polarization retention in Pb(Zr0.4Ti0.6)O3 capacitors with IrO2 top electrodes
Author
강보수
Keywords
PB(ZR,TI)O-3 THIN-FILMS; CRYSTALLIZATION; TEMPERATURE; FATIGUE
Issue Date
2004-04
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v. 84, No. 16, Page. 3127-3129
Abstract
The retention characteristics of Ir/IrO2/Pb(Zro(0.4)Ti(0.6))O-3(PZT)/Pt/IrO2 capacitors were investigated by measuring the switching and nonswitching polarizations, the switching current profiles, and the P-V hysteresis loops. The retention losses of Ir/IrO2 /PZT/Pt/IrO2 capacitors were compared with those of the Pt/PZT/Pt capacitors, and a significant improvement of an opposite-state retention was observed. It was found that the growth and the relaxation behaviors of the internal field are quite similar for both capacitors, but that the polarization backswitching becomes significantly smaller for the PZT capacitors with the IrO2 top electrodes. The difference in polarization backswitching might originate from the nature of the ferroelectric/electrode interfaces, possibly suppressing the nucleation of opposite domains at the interfaces.
URI
https://aip.scitation.org/doi/10.1063/1.1710715https://repository.hanyang.ac.kr/handle/20.500.11754/139295
ISSN
0003-6951
DOI
10.1063/1.1710715
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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