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Effect of selective oxidation condition on defect generation in gate oxide

Title
Effect of selective oxidation condition on defect generation in gate oxide
Author
이정호
Keywords
selective oxidation; plasma reoxidation; W/poly-Si; defect generation
Issue Date
2004-04
Publisher
INST PURE APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1, v. 43, No. 4B, Page. 1825-1828
Abstract
We Studied the effect of selective oxidation conditions on gate oxide characteristics. Selective oxidation in hydrogen-rich wet ambient at 850degreesC-950degreesC was found to generate defects both at the SiO2/Si interface and in oxide bulk, resulting in a higher stress-induced leakage current. The degradation of the device can be explained by the incorporation of hydrogen into the gate oxide during a high-temperature selective oxidation process. The plasma reoxidation process induced fewer defects due to radical oxidation at low temperature.
URI
https://iopscience.iop.org/article/10.1143/JJAP.43.1825https://repository.hanyang.ac.kr/handle/20.500.11754/136815
ISSN
0021-4922
DOI
10.1143/JJAP.43.1825
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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