JAPANESE JOURNAL OF APPLIED PHYSICS PART 1, v. 43, No. 4B, Page. 1825-1828
We Studied the effect of selective oxidation conditions on gate oxide characteristics. Selective oxidation in hydrogen-rich wet ambient at 850degreesC-950degreesC was found to generate defects both at the SiO2/Si interface and in oxide bulk, resulting in a higher stress-induced leakage current. The degradation of the device can be explained by the incorporation of hydrogen into the gate oxide during a high-temperature selective oxidation process. The plasma reoxidation process induced fewer defects due to radical oxidation at low temperature.