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Impact of In Situ NH3 preannealing on sub-100nm Tungsten Polymetal Gate Electrode during the Sealing Nitride Formation

Title
Impact of In Situ NH3 preannealing on sub-100nm Tungsten Polymetal Gate Electrode during the Sealing Nitride Formation
Author
이정호
Keywords
tungsten polymetal gate; W/WNx /poly-Si; NH3 anneal; sheet resistance
Issue Date
2004-04
Publisher
INST PURE APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS PART1, v. 43, No. 4B, Page. 1829-1832
Abstract
We investigated the effects of in situ NH3 preannealing immediately before sealing nitride deposition on the wordline sheet resistance (R-s) of a tungsten polymetal gate electrode (W/WNx/poly-Si). While in situ NH3 preannealing is very effective for the suppression of W-O whisker formation, it was found that excessively long-time NH3 preannealing could cause an unexpectedly abnormal increase in the wordline R, of short gate length electrodes, typically < 100 nm. Since X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS) analyses reveal that long-time NH3 preannealing results in the nitridation of tungsten sidewall surfaces. the wordline R-s increase in a small-gate-length sample subjected to Iong-time NH3 preannealing is mainly due to tungsten sidewall nitridation, which is localized at the surface region of the tungsten sidewall. In addition, at a Iona-time NH(3-)preannealed gate electrode, an abnormal inflation of the tungsten sidewall occurred due to a slight increment in lattice spacing by tungsten nitridation.
URI
https://iopscience.iop.org/article/10.1143/JJAP.43.1829https://repository.hanyang.ac.kr/handle/20.500.11754/136811
ISSN
0021-4922
DOI
10.1143/JJAP.43.1829
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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