31 0

Exposure simulation of electron beam microcolumn lithography

Title
Exposure simulation of electron beam microcolumn lithography
Author
오혜근
Keywords
Monte Carlo methods; Optical simulations; Electron beam lithography; Beam shaping; Electron beams; Lithography; Scattering
Issue Date
2004-05
Publisher
SPIE
Citation
Proceedings of SPIE - The International Society for Optical Engineering, v. 5374, No. PART 2, Page. 1100-1104
Abstract
We propose an improved method to describe the electron-resist interaction based on Dill’s model for exposure simulation. For this purpose, Monte Carlo simulation was performed to obtain the energy intensity distribution in the chemically amplified resist. Tabulated Mott data for elastic scattering, Moller and Vriens cross sections for inelastic scattering, and Modified Bethe equation plus discrete energy loss for energy loss are used for the calculation of the energy intensity distribution. Through the electron-resist interaction, the energy intensity distribution changes resist components into the exposure production such as the photoacid concentration or the photoacid generator inside resists with various pattern shapes by using the modified Dill’s model. Our simulation profiles show a good agreement with experimental profiles.
URI
https://repository.hanyang.ac.kr/handle/20.500.11754/132069https://www.spiedigitallibrary.org/conference-proceedings-of-spie/5374/1/Exposure-simulation-of-electron-beam-microcolumn-lithography/10.1117/12.537128.short
ISSN
0277-786X
DOI
10.1117/12.537128
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE