Monte Carlo methods; Optical simulations; Electron beam lithography; Beam shaping; Electron beams; Lithography; Scattering
Proceedings of SPIE - The International Society for Optical Engineering, v. 5374, No. PART 2, Page. 1100-1104
We propose an improved method to describe the electron-resist interaction based on Dill’s model for exposure simulation. For this purpose, Monte Carlo simulation was performed to obtain the energy intensity distribution in the chemically amplified resist. Tabulated Mott data for elastic scattering, Moller and Vriens cross sections for inelastic scattering, and Modified Bethe equation plus discrete energy loss for energy loss are used for the calculation of the energy intensity distribution. Through the electron-resist interaction, the energy intensity distribution changes resist components into the exposure production such as the photoacid concentration or the photoacid generator inside resists with various pattern shapes by using the modified Dill’s model. Our simulation profiles show a good agreement with experimental profiles.