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A 3D Numerical Study of the Polishing Behavior during an Oxide Chemical Mechanical Planarization Process

Title
A 3D Numerical Study of the Polishing Behavior during an Oxide Chemical Mechanical Planarization Process
Author
박진구
Keywords
Chemical-Mechanical Planarization (CMP); CMP; Computational Fluid Dynamics (CFD); Finite Volume Method (FVM); FVM; Incompressible Navier-Stokes Equation; Pad
Issue Date
2004-02
Publisher
TRANS TECH PUBLICATIONS LTD
Citation
KEY ENGINEERING MATERIALS, v. 257-258, Page. 433-438
Abstract
The slurry fluid motion, abrasive particle motion, and roles of groove patterns on the pads are numerically investigated in 2D and 3D geometries. The simulation results were analyzed in terms of experimental removal rate and WIWNU (within wafer non-uniformity) for ILD (inter level dielectric) CMP process. Numerical investigations revealed that the grooves in the pad behave as the uniform distributor of abrasive particles and enhance the removal rate by increasing shear stress. Higher removal rate and desirable uniformity are numerically and experimentally observed at the pad with grooves. Numerical analysis results matched very well with the experimental results and are useful for understanding the polishing mechanism and local physics.
URI
https://repository.hanyang.ac.kr/handle/20.500.11754/132039https://www.scientific.net/KEM.257-258.433
ISSN
1013-9826
DOI
10.4028/www.scientific.net/KEM.257-258.433
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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