Complementary resistive switching behaviors of TiO2-based tri-layer and electrical nonlinear properties of PNP selectors based p-CoOx and n-IGZO oxide semiconductors.
- Complementary resistive switching behaviors of TiO2-based tri-layer and electrical nonlinear properties of PNP selectors based p-CoOx and n-IGZO oxide semiconductors.
- Hong, Jin Pyo
- Issue Date
- This doctoral dissertation describes an experimental study on resistively switching behaviors and switching mechanisms of the TiOx multilayer homo-, hetero-junctions and oxide semiconductor based p-n-p biristor structure for selection device.
At first, the TiOx/TiOy homo-junction for resistive switching characteristics were successfully prepared on Pt electrode under various conditions by using an RF magnetron sputtering system. The homo-junction shows reversible bipolar resistive switching behaviors between the high resistance state (HRS) and the low resistance state (LRS). The current-voltage characteristics of resistive switching were investigated by dc voltage sweep and double logarithmic fitting of reset process. The reproducible switching behavior was found to strongly depending on the migration of oxygen ions and vacancies between TiOx and TiOy in which there are different oxygen compositions. In addition, the x-ray photoelectron spectroscopy reveals redox reaction at the interface of TiOx and TiOy.
Second, the complementary resistive switching (CRS) behavior was exhibited using anti-serial connected bipolar resistive switching elements in Pt/TiOx/TiOy/TiOx/Pt. The middle metal electrode is not necessary due to the conductive characteristics of TiOy layer which acts as switching elements and middle electrode simultaneously. In order to investigate the relation between switching elements and CRS, CRS property was compared with different switching elements composed different oxide thickness and oxygen contents. The current-voltage characteristics of CRS were investigated by dc voltage sweep and pulsed signal measurement. As like switching elements, the migration of oxygen ions and vacancies are main reasons of CRS behavior in Pt/TiOx/TiOy/TiOx/Pt structure. The additional transmittance electron microscopy analysis of Pt/TiOx/TiON/TiOx/Pt presented extra oxidation region at the interface.
Finally, the nonlinear current-voltage characteristics in Pt/CoOx/GIZO /CoOx/Pt p-n-p biristor structure have been compared under different oxide thickness and oxygen contents. Two types of oxide semiconductor were prepared by an RF magnetron sputtering using a CoO and IGZO ceramic targets. In order to characterize the oxide semiconductor, Hall effect measurement and UV-visible spectrometer were analyzed. The typical nonlinear I-V characteristics of p-n-p biristor were similar to other nonlinear selectors. However, the room temperature preparation of oxide p-n-p and possibility of stacking on layer by layer for 3D structure are the advantage of oxide p-n-p biristor as selector device for nano-crossbar array architecture.
- Appears in Collections:
- GRADUATE SCHOOL[S](대학원) > NANOSCALE SEMICONDUCTOR ENGINEERING(나노반도체공학과) > Theses (Ph.D.)
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)