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dc.contributor.advisor홍진표-
dc.contributor.author정재복-
dc.date.accessioned2020-02-25T16:32:15Z-
dc.date.available2020-02-25T16:32:15Z-
dc.date.issued2015-02-
dc.identifier.urihttp://dcollection.hanyang.ac.kr/jsp/common/DcLoOrgPer.jsp?sItemId=000000082420en_US
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/129266-
dc.description.abstractThis thesis discusses a study of resistive switching characteristics of the Pt/Ta2O5-x/GO/Ta and Pt/Ta2O5-x/TaN flame cells. At first, the influence of a graphene oxide (GO) layer on Pt/Ta2O5-x/Ta bipolar resistive switches, in which the GO layer is spin-coated on the Ta bottom electrode before the growth of a Ta2O5-x switching element was examined. Experimental observations suggest that the insertion of the GO layer is crucial for adjusting the low resistance states without changing the high resistance states. Controlling GO layer thickness represents the variation of the forming voltage and on/off ratio, demonstrating enhanced memory windows. The possible nature of the enhanced switching events is described by adapting the creation of strong conductive filaments driven by a greater resistive GO layer. Second, TaN thin films were synthesized by using radio-frequency sputtering with 5 mtorr Ar/N2 working pressure with varied N2 flowing rates. And then, structural and electrical characterization analyses of the films were carried out. Clear changes of phases in the films were observed from metallic bcc TaN to N-rich phases when the N2 flowing rate increased from 0.4 sccm to 7 sccm. They were associated with a change in film resistivity from metallic to insulating characteristics. Finally, the resistive switching behavior in Pt/TaOx/bcc TaN and Pt/TaOx/fcc TaN have been compared under dc sweeping voltage. Two types of structure were prepared by a radio frequency magnetron sputtering. The typical I-V characteristics of the two samples shows a bipolar switching behavior. However, the on/off ratio of Pt/TaOx/bcc TaN is lower than the Pt/TaOx/fcc TaN-
dc.publisher한양대학교-
dc.titleResistive switching characteristics between binary oxide and metal (metal nitride) for nonvolatile memory application-
dc.typeTheses-
dc.contributor.googleauthor정재복-
dc.sector.campusS-
dc.sector.daehak대학원-
dc.sector.department나노반도체공학과-
dc.description.degreeMaster-
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GRADUATE SCHOOL[S](대학원) > NANOSCALE SEMICONDUCTOR ENGINEERING(나노반도체공학과) > Theses (Master)
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