Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | HYEONGTAG JEON | - |
dc.contributor.author | 최용혁 | - |
dc.date.accessioned | 2020-02-25T16:31:07Z | - |
dc.date.available | 2020-02-25T16:31:07Z | - |
dc.date.issued | 2015-02 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/128846 | - |
dc.identifier.uri | http://hanyang.dcollection.net/common/orgView/200000425755 | en_US |
dc.description.abstract | The effects of O3 treatment on amorphous indium gallium zinc oxide (a-IGZO) thin film transistors were examined. O3 exposure times from 60 to 600 s were used, with an O3 concentration of 100 g/m3. Compared to untreated a-IGZO TFT, a-IGZO TFTs treated with O3 for 600 s exhibited favorable electrical characteristics such as saturation mobility (µsat) (from 4.54 to 4.85 cm2/Vs), subthreshold swing (S. S) (from 0.41 to 0.33 V/decade) and Ion/off (from 1.23 x 106 to 2.54 x 107). We also found that the O3-treated a-IGZO TFTs show an enhanced instability in threshold voltage (Vth) shift under humidity and negative bias illumination stability (NBIS) conditions. In particular, the Vth shift value of a-IGZO TFT treated with O3 for 600 s shows almost no change (ΔVth < -0.3 V) under NBIS condition for 3 h. Based on these results, we have determined that a-IGZO TFT treated with O3 for 600 s is highly effective in reducing oxygen vacancy [Vo] defects in the a-IGZO channel. | - |
dc.publisher | 한양대학교 | - |
dc.title | ENHANCEMENT OF ELECTRICAL CHARACTERISTICS AND STABILITY OF AMORPHOUS In-Ga-Zn-O THIN FILM TRANSISTOR BY O3 TREATMENT | - |
dc.type | Theses | - |
dc.contributor.googleauthor | YONGHYUK CHOI | - |
dc.sector.campus | S | - |
dc.sector.daehak | 대학원 | - |
dc.sector.department | 신소재공학과 | - |
dc.description.degree | Master | - |
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