Effect of Electrical Current Change on Aluminum Induced Crystallization of Amorphous Silicon Thin Film by Joule heating
- Title
- Effect of Electrical Current Change on Aluminum Induced Crystallization of Amorphous Silicon Thin Film by Joule heating
- Author
- 최영준
- Alternative Author(s)
- Choi, Young Jun
- Advisor(s)
- 문승재
- Issue Date
- 2017-02
- Publisher
- 한양대학교
- Degree
- Master
- Abstract
- In this study, the effect of Joule heating using constant electrical currents was studied during aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) thin films. Samples were prepared by depositing a-Si on glass substrates by plasma enhanced chemical vapor deposition, and aluminum was then sputtered on the a-Si thin film. Constant currents of 4, 5, and 6 A were applied to the Al thin film to crystallize the a-Si thin film. Appropriate annealing times were assigned for each current value (40 s for 4 A, 20 s for 5 A, and 15.5 s for 6 A). In-situ temperature measurement during crystallization were performed with an infrared thermal camera. After crystallization, a wet etching process was conducted to remove the Al layer for clear investigation of the polycrystalline silicon (p-Si) structure. Raman spectroscopy showed a peak around 520 cm-1, which verifies the formation of p-Si thin films. Grain sizes were determined by field emission scanning electron microscopy (FESEM), which also showed that the resulting p-Si structure was porous with the average pore size of around 6 μm.
- URI
- https://repository.hanyang.ac.kr/handle/20.500.11754/124803http://hanyang.dcollection.net/common/orgView/200000429591
- Appears in Collections:
- GRADUATE SCHOOL[S](대학원) > MECHANICAL ENGINEERING(기계공학과) > Theses (Master)
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