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Effect of the Laser-Scribing on Wafering of Single Crystalline Si using Electrodeposition Assisted Stripping (EAS) Process

Title
Effect of the Laser-Scribing on Wafering of Single Crystalline Si using Electrodeposition Assisted Stripping (EAS) Process
Author
전재호
Advisor(s)
유봉영
Issue Date
2017-02
Publisher
한양대학교
Degree
Master
Abstract
Silicon itself takes a large portion of the solar cell cost. Therefore, lowering its cost is directly related to the cost-reduction in the silicon solar cell manufacture. In the last few decades, there were a number of attempts to reduce the production cost of the silicon by reducing the thickness of the silicon wafer such as a sawing technique, epoxy induced spalling process and etc. Among these techniques, a novel method called Electrodeposit Assisted Stripping (EAS) process is one of the most effective and inexpensive kerf-free methods for acquiring a high quality thin single crystalline silicon wafer. The mechanism of this process is a ‘spalling’ occurred at the position where the maximum shear stress takes place, not on the surface but just below the surface. During the EAS process, a metal stress layer of a certain thickness is electrochemically deposited onto the bulk silicon substrate inducing a thin silicon film to be lifted-off. The advantage of the EAS process is that this can be repeatedly carried out from the bulk silicon as long as it is worn out. In order to repeat this process, the initiation of the crack should be controlled to take place from the side of the bulk silicon. During spalling, however, the crack initiates from the inner surface on top of the bulk silicon leaving silicon residues at the edge of bulk silicon which should be removed to repeat the EAS process. In this study, pre-crack is created by a laser scribing at the side of the silicon wafer just below the top surface. This pre-crack is to directly initiate the crack propagation parallel to the top surface from the notch point. Initially, the experimental is conducted for the optimization of different laser parameters (laser power, spot overlap, process repetition cycle). Then, the experiments were carried out to confirm the effect of the laser scribing on the spalling of a single crystalline silicon.
URI
http://dcollection.hanyang.ac.kr/jsp/common/DcLoOrgPer.jsp?sItemId=000000099717https://repository.hanyang.ac.kr/handle/20.500.11754/124202
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > ADVANCED MATERIALS ENGINEERING(첨단소재공학과) > Theses (Master)
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