Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | 박태주 | - |
dc.contributor.author | 김원준 | - |
dc.date.accessioned | 2020-02-12T16:38:41Z | - |
dc.date.available | 2020-02-12T16:38:41Z | - |
dc.date.issued | 2017-02 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/124044 | - |
dc.identifier.uri | http://hanyang.dcollection.net/common/orgView/200000430334 | en_US |
dc.description.abstract | g-C3N4를 기반으로 하는 이종접합 광촉매의 합성을 위한 원자 층 증착 (ALD) 기술 적용은 전하의 재결합을 막기 위한 이종접합의 형성이 수월하게 될 뿐 아니라, 공정시간을 기존 1~2일에서 수 시간으로 감소시키고 합성된 입자의 회수공정을 생략할 수 있어 향상된 생산성을 갖는다. 위 공정으로 형성된 ZnS/g-C3N4 이종접합 광촉매에서 ZnS는 g-C3N4 표면의 소수성 성질로 인해 균질한 막이 아닌 양자점 형태로 코팅이 된다. ZnS/g-C3N4의 광촉매 특성은 단일 g-C3N4에 비해 ALD 공정이 5 사이클이 될 때까지 2.6배 향상된 결과를 보였고, 5 사이클 이후로는 수렴된 결과를 보였다. 이는 전하의 재결합 정도를 보여주는 PL 결과가 ALD 5 사이클 이후의 파우더에서 수렴되는 것과 일치한다. 이러한 결과는 단 5 사이클의 ZnS 코팅으로도 전하 분리가 충분히 일어날 만큼의 이종접합이 형성되었음을 보여준다.|Atomic layer deposition (ALD) is proposed to synthesize g-C3N4 based heterojunction photocatalyst with improved productivity, which enables to decrease the process time from a few days to several hours and skip collecting process of the synthesized powder as well as to form an effective heterojunction for charge separation reducing carrier recombination. In ZnS/g-C3N4 heterojunction composite, g-C3N4 is found to be uniformly covered with ZnS quantum-dots rather than conformal ZnS film due to hydrophobic nature of g-C3N4 surface. Photocatalytic activity of the ZnS/g-C3N4 heterojunction composites is enhanced up to 2.6 times compared to that of pristine g-C3N4 with increasing ZnS ALD cycle to 5, and saturated over 5 ALD cycles, which is consistent with the change in PL intensity indicating carrier recombination. This suggests that only 5 cycle of ZnS is sufficient to form heterojunction for charge separation.; Atomic layer deposition (ALD) is proposed to synthesize g-C3N4 based heterojunction photocatalyst with improved productivity, which enables to decrease the process time from a few days to several hours and skip collecting process of the synthesized powder as well as to form an effective heterojunction for charge separation reducing carrier recombination. In ZnS/g-C3N4 heterojunction composite, g-C3N4 is found to be uniformly covered with ZnS quantum-dots rather than conformal ZnS film due to hydrophobic nature of g-C3N4 surface. Photocatalytic activity of the ZnS/g-C3N4 heterojunction composites is enhanced up to 2.6 times compared to that of pristine g-C3N4 with increasing ZnS ALD cycle to 5, and saturated over 5 ALD cycles, which is consistent with the change in PL intensity indicating carrier recombination. This suggests that only 5 cycle of ZnS is sufficient to form heterojunction for charge separation. | - |
dc.publisher | 한양대학교 | - |
dc.title | 원자층 코팅법을 이용한 g-C3N4 기반 이종접합 광촉매 연구 | - |
dc.title.alternative | g-C3N4 based heterojunction photocatalyst using atomic layer coating | - |
dc.type | Theses | - |
dc.contributor.googleauthor | 김원준 | - |
dc.contributor.alternativeauthor | Kim, Won Jun | - |
dc.sector.campus | S | - |
dc.sector.daehak | 대학원 | - |
dc.sector.department | 재료공학과 | - |
dc.description.degree | Master | - |
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