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Dependence of electrical properties on sulfur distribution in atomic-layer-deposited HfO2 thin film on an InP substrate

Title
Dependence of electrical properties on sulfur distribution in atomic-layer-deposited HfO2 thin film on an InP substrate
Author
박태주
Keywords
ALD HfO2; InP; Sulfur passivation; H2S; X-ray absorption spectroscopy
Issue Date
2019-10
Publisher
ELSEVIER SCIENCE BV
Citation
APPLIED SURFACE SCIENCE, v. 491, Page. 83-87
Abstract
S passivation of a HfO2 film on an InP substrate is demonstrated using annealing in H2S ambient either before or after ALD of the HfO2 film. We examined the resulting distribution and chemical state of the incorporated S both in the HfO2 film and at its interface with the InP substrate using secondary ion mass spectroscopy and X-ray absorption spectroscopy. Annealing in H2S ambient before ALD of HfO2 resulted in accumulation of S at the interface in the sulfide (S2-) phase (due to lack of oxygen), which effectively suppressed interfacial reactions during ALD and passivated interfacial defect states. On the other hand, annealing in H2S ambient after ALD of the HfO2 film induced a sulfate (S6+) phase in the film due to the abundant oxygen in the film, as well as a sulfide (S2-) phase at the interface. This improved the charge trapping behavior by decreasing the bulk defect density in the HfO2 film.
URI
https://www.sciencedirect.com/science/article/pii/S0169433219318094https://repository.hanyang.ac.kr/handle/20.500.11754/122089
ISSN
0169-4332; 1873-5584
DOI
10.1016/j.apsusc.2019.06.100
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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