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Highly Uniform Resistive Switching Performances Using Two-Dimensional Electron Gas at a Thin-Film Heterostructure for Conductive Bridge Random Access Memory

Title
Highly Uniform Resistive Switching Performances Using Two-Dimensional Electron Gas at a Thin-Film Heterostructure for Conductive Bridge Random Access Memory
Author
박태주
Keywords
conductive bridge random access memory; oxide heterostructure; two-dimensional electron gas; atomic layer deposition; thin film
Issue Date
2019-08
Publisher
AMER CHEMICAL SOC
Citation
ACS APPLIED MATERIALS & INTERFACES, v. 11, No. 33, Page. 30028-30036
Abstract
This research demonstrates, for the first time, the development of highly uniform resistive switching devices with self-compliance current for conductive bridge random access memory using two-dimensional electron gas (2DEG) at the interface of an Al2O3/TiO2 thin-film heterostructure via atomic layer deposition (ALD). The cell is composed of Cu/Ti/Al2O3/TiO2, where Cu/Ti and Al2O3 overlayers are used as the active/buffer metals and solid electrolyte, respectively, and the 2DEG at the interface of Al2O3/TiO2 heterostructure, grown by the ALD process, is adopted as a bottom electrode. The Cu/Ti/Al2O3/TiO2 device shows reliable resistive switching characteristics with excellent uniformity under a repetitive voltage sweep (direct current sweep). Furthermore, it exhibits a cycle endurance over 10(7) cycles under short pulse switching. Remarkably, a reliable operation of multilevel data writing is realized up to 10(7) cycles. The data retention time is longer than 10(6) s at 85 degrees C. The uniform resistance switching characteristics are achieved via the formation of small (similar to a few nm width) Cu filament with a short tunnel gap (˂0.5 nm) owing to the 2DEG at the Al2O3/TiO2 interface. The performance and operation scheme of this device may be appropriate in neuromorphic applications.
URI
https://pubs.acs.org/doi/abs/10.1021/acsami.9b08941https://repository.hanyang.ac.kr/handle/20.500.11754/121932
ISSN
1944-8244; 1944-8252
DOI
10.1021/acsami.9b08941
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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