Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박태주 | - |
dc.date.accessioned | 2020-01-16T05:45:50Z | - |
dc.date.available | 2020-01-16T05:45:50Z | - |
dc.date.issued | 2019-07 | - |
dc.identifier.citation | ACS APPLIED MATERIALS & INTERFACES, v. 11, No. 28, Page. 25140-25146 | en_US |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.issn | 1944-8252 | - |
dc.identifier.uri | https://pubs.acs.org/doi/abs/10.1021/acsami.9b05589 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/121904 | - |
dc.description.abstract | We demonstrated surface passivation of a black Si-based solar cell using an (NH4)(2)S solution to mitigate surface recombination velocity. Incorporated S at the interface between atomic-layer-deposited Al2O3 and black Si by (NH4)(2)S solution treatment boosted the density of negative fixed charges, S-enhanced field-effect passivation. Furthermore, NH4OH generated during (NH4)(2)S solution treatment removed the defective Si phase at the black Si surface, the surface cleaning effect. The optimized (NH4)(2)S solution treatment significantly enhanced the internal quantum efficiency up to similar to 17.2% in the short wavelength region, suggesting suppressed surface recombination. As a result, photoconversion efficiency of the cell increased from 11.6 to 13.5%, by 16% compared to the control cells without (NH4)(2)S solution treatment. | en_US |
dc.description.sponsorship | This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MEST) (no. 2017R1A2B4002842) and by an International Collaborative Energy Technology R&D Program of the KETEP granted financial resource from the Ministry of Trade, Industry and Energy, Republic of Korea (no. 20168520011370). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | AMER CHEMICAL SOC | en_US |
dc.subject | black Si | en_US |
dc.subject | Si photovoltaics | en_US |
dc.subject | field-effect passivation | en_US |
dc.subject | S passivation | en_US |
dc.subject | (NH4)(2)S | en_US |
dc.title | Sulfur-Enhanced Field-Effect Passivation using (NH4)(2)S Surface Treatment for Black Si Solar Cells | en_US |
dc.type | Article | en_US |
dc.relation.no | 28 | - |
dc.relation.volume | 11 | - |
dc.identifier.doi | 10.1021/acsami.9b05589 | - |
dc.relation.page | 25140-25146 | - |
dc.relation.journal | ACS APPLIED MATERIALS & INTERFACES | - |
dc.contributor.googleauthor | Kim, Dae Woong | - |
dc.contributor.googleauthor | Song, Jae-Won | - |
dc.contributor.googleauthor | Jin, Hyun Soo | - |
dc.contributor.googleauthor | Yoo, Bongyoung | - |
dc.contributor.googleauthor | Lee, Jung-Ho | - |
dc.contributor.googleauthor | Park, Tae Joo | - |
dc.relation.code | 2019002549 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING | - |
dc.identifier.pid | tjp | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.