Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 최창환 | - |
dc.date.accessioned | 2020-01-13T05:40:45Z | - |
dc.date.available | 2020-01-13T05:40:45Z | - |
dc.date.issued | 2019-08 | - |
dc.identifier.citation | JOURNAL OF ALLOYS AND COMPOUNDS, v. 797, Page. 277-283 | en_US |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.issn | 1873-4669 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0925838819317852?via%3Dihub | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/121728 | - |
dc.description.abstract | In this report we perform the irradiation of argon (Ar) plasma on the surface of amorphous atomic layer deposited HfO2 thin film intentionally to modulate interface between Ti and HfO2 having influence on resistive switching as well as synaptic characteristics within the Ti/HfO2/Pt memristor structure. Due to structural change in sub-TiOx interfacial layer as well as oxygen vacancy modulation at the HfO2/Ti interface, compared to the pristine HfO2 thin film, the Ar plasma-irradiated HfO2 thin film exhibits an electro-forming free repeatable switching with digital SET and multilevel voltage-induced RESET characteristics under smaller positive and negative sweeps, respectively. The multilevel resistance states are induced by applying different stopping voltages during the process of RESET. To investigate synaptic characteristics of the Ar plasma-treated device, we carried out the transient electrical measurement by designing the input stimulation with different pulse parameters in order to achieve the symmetric and near-linear conductance change. Finally, we emulated one of the important learning rules of biological synapse called spike-time-dependent-plasticity (STDP) by applying specially designed spikes at the top and bottom electrode by adjusting the time intervals between pre- and post-spikes. (C) 2019 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | This research was supported by the Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning. (NRF-2016M3A7B4910426) as well as by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2016R1A6A1A03013422). | en_US |
dc.language.iso | en | en_US |
dc.publisher | ELSEVIER SCIENCE SA | en_US |
dc.subject | Plasma treatment | en_US |
dc.subject | Amorphous ALD HfO2 | en_US |
dc.subject | Switching | en_US |
dc.subject | Neuromorphic memristor | en_US |
dc.subject | STDP | en_US |
dc.title | Improved resistive switching and synaptic characteristics using Ar plasma irradiation on the Ti/HfO2 interface | en_US |
dc.type | Article | en_US |
dc.relation.volume | 797 | - |
dc.identifier.doi | 10.1016/j.jallcom.2019.05.114 | - |
dc.relation.page | 277-283 | - |
dc.relation.journal | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.contributor.googleauthor | Ku, Boncheol | - |
dc.contributor.googleauthor | Abbas, Yawar | - |
dc.contributor.googleauthor | Kim, Sohyeon | - |
dc.contributor.googleauthor | Sokolov, Andrey Sergeevich | - |
dc.contributor.googleauthor | Jeon, Yu-Rim | - |
dc.contributor.googleauthor | Choi, Changhwan | - |
dc.relation.code | 2019001568 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | cchoi | - |
dc.identifier.orcid | https://orcid.org/0000-0002-8386-3885 | - |
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