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Wafer-Scale Synthesis of Reliable High-Mobility Molybdenum Disulfide Thin Films via Inhibitor-Utilizing Atomic Layer Deposition

Title
Wafer-Scale Synthesis of Reliable High-Mobility Molybdenum Disulfide Thin Films via Inhibitor-Utilizing Atomic Layer Deposition
Author
안지훈
Keywords
atomic layer deposition; field effect transistors; molybdenum disulfide; MoS2 growth mechanisms; precursor chemisorption kinetics
Issue Date
2017-12
Publisher
WILEY-V C H VERLAG GMBH
Citation
ADVANCED MATERIALS, v. 29, No. 47, Article. no. 1703031
Abstract
A reliable and rapid manufacturing process of molybdenum disulfide (MoS2) with atomic-scale thicknesses remains a fundamental challenge toward its successful incorporation into high-performance nanoelectronics. It is imperative to achieve rapid and scalable production of MoS2 exhibiting high carrier mobility and excellent on/off current ratios simultaneously. Herein, inhibitor-utilizing atomic layer deposition (iALD) is presented as a novel method to meet these requirements at the wafer scale. The kinetics of the chemisorption of Mo precursors in iALD is governed by the reaction energy and the steric hindrance of inhibitor molecules. By optimizing the inhibition of Mo precursor absorption, the nucleation on the substrate in the initial stage can be spontaneously tailored to produce iALD-MoS2 thin films with a significantly increased grain size and surface coverage (>620%). Moreover, highly crystalline iALD-MoS2 thin films, with thicknesses of only a few layers, excellent room temperature mobility (13.9 cm(2) V-1 s(-1)), and on/off ratios (>10(8)), employed as the channel material in field effect transistors on 6 '' wafers, are successfully prepared.
URI
https://onlinelibrary.wiley.com/doi/full/10.1002/adma.201703031https://repository.hanyang.ac.kr/handle/20.500.11754/121655
ISSN
0935-9648; 1521-4095
DOI
10.1002/adma.201703031
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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