44 0

Pattern Degradation with Larger Particles on EUV Pellicle

Title
Pattern Degradation with Larger Particles on EUV Pellicle
Author
오혜근
Keywords
CD degradation; CD uniformity; EUV lithography; EUV pellicle; particle defect
Issue Date
2018-10
Publisher
SPIE
Citation
Proceedings of SPIE - The International Society for Optical Engineering; International Conference on Extreme Ultraviolet Lithography 2018, v. 10809, Article no. 10809G
Abstract
Particle defects placed on extreme-ultraviolet (EUV) pellicle can degrade pattern quality due to the particle defect shadowing. It is obvious that serious patterning error would be occurred due to larger particle defects on top of the pellicle, so that the effect of critical dimension (CD) degradation caused by particle defect on top of the EUV pellicle is investigated. We tried to determine the maximum allowable particle defect size with various pattern types and nodes via commercial simulation tool. Also, we set the boundaries for CD error limit of 5 % and CD non-uniformity to 0.2 nm. Based on these result, we determined the maximum allowable particle defect size for N5 and N7 nodes in order to find the proper defect control. Copyright © 2018 SPIE.
URI
https://www.spiedigitallibrary.org/conference-proceedings-of-spie/10809/108091G/Pattern-degradation-with-larger-particles-on-EUV-pellicle/10.1117/12.2502784.shorthttps://repository.hanyang.ac.kr/handle/20.500.11754/121560
ISSN
0277-786X
DOI
10.1117/12.2502784
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE