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A possible wafer heating during EUV exposure

Title
A possible wafer heating during EUV exposure
Author
오혜근
Keywords
EUV; thermal deformation; Wafer heating
Issue Date
2018-10
Publisher
SPIE
Citation
Proceedings of SPIE - The International Society for Optical Engineering; International Conference on Extreme Ultraviolet Lithography 2018, v. 10809, Article no. 108901R
Abstract
Extreme ultraviolet (EUV) lithography is the most promising candidate for sub-1x nm pattering. CO 2 laser irradiates to a Sn droplet and then, EUV radiation can be emitted. In this process, infrared radiation (IR) is simultaneously emitted 3 to 5 times more than EUV radiation. In order to suppress IR, spectral purity filter (SPF) [8] at collector mirror and dynamic gas lock (DGL) [4] are used. Nevertheless, some amount of IR still reaches to the wafer and it can lead to wafer heating issue, so that we investigated temperature and deformation of the wafer by using finite element method (FEM) simulation. Two different silicon wafer types are compared. There is a difference in temperature and deformation between single layered wafer with and without the bottom chuck. We also found that the temperature increased more with added stacks like hard mask or photoresist on the top of the wafer. Copyright © 2018 SPIE.
URI
https://www.spiedigitallibrary.org/conference-proceedings-of-spie/10809/108091R/A-possible-wafer-heating-during-EUV-exposure/10.1117/12.2502918.short?SSO=1https://repository.hanyang.ac.kr/handle/20.500.11754/121558
ISSN
0277-786X
DOI
10.1117/12.2502918
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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