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Fabrication of Microholes in Silicon Wafers by Using Wet-Chemical Etching

Title
Fabrication of Microholes in Silicon Wafers by Using Wet-Chemical Etching
Author
안지훈
Keywords
Si; Wet-chemical etching; Microholes
Issue Date
2018-08
Publisher
Korean Physical Society
Citation
New Physics: Sae Mulli, v. 68, No. 8, Page. 834-838
Abstract
The presence of microholes gives materials unique physical properties through their effect on both light and matter. In particular, they can be widely used to increase the efficiency of devices such as light-emitting diodes (LEDs), organic LEDs (OLEDs), solar cells, and sensors. They also have various applications such as aiding plasmon formation on a metal surface. This work reports the quick and inexpensive formation of large amounts of microholes through wet-chemical etching. A Si(100) substrate was etched with KOH solution; the resulting holes depended on the temperature and etching duration. Reacting Si and KOH solution (20%) at 70, 80 and 90 ∘ C resulted in microholes. Field-emission scanning electron microscopy (FE-SEM) was used to investigate the mechanism and the rate of etching with respect to temperature and etching duration. The completed microholes can be finely adjusted through the deposition of a metal such as Au, Pt, Ag or Cu to give them properties suitable for various uses.
URI
http://www.npsm-kps.org/journal/view.html?volume=68&number=8&spage=834&year=2018https://repository.hanyang.ac.kr/handle/20.500.11754/121444
ISSN
0374-4914; 2289-0041
DOI
10.3938/NPSM.68.834
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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