Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 방진호 | - |
dc.date.accessioned | 2019-12-10T20:27:14Z | - |
dc.date.available | 2019-12-10T20:27:14Z | - |
dc.date.issued | 2018-12 | - |
dc.identifier.citation | MATERIALS CHEMISTRY AND PHYSICS, v. 220, page. 293-298 | en_US |
dc.identifier.issn | 0254-0584 | - |
dc.identifier.issn | 1879-3312 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/abs/pii/S0254058418307570?via%3Dihub | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/121167 | - |
dc.description.abstract | Ultrathin and conformal ZnS film grown by atomic layer deposition was employed in quantum dot-sensitized solar cells (QDSSCs) as an interfacial layer (IL) between mesoporous TiO2 photoanode and successive ionic layer adsorption and reaction (SILAR)-grown PbS QDs. ZnS IL provided more nucleation sites compared to a bare TiO2 photoanode, which enhanced PbS QDs loading remarkably. As a result, the optical absorbance and thus photocurrent density considerably increased. The power conversion efficiency of QDSSCs increased from 3.4% to 4% by introducing the ZnS IL. However, the beta-recombination model obtained from electrochemical impedance spectroscopy revealed the evolution of charge carrier recombination inside QDs as a consequence of enhanced QD loading, which partly dilutes this benefit. | en_US |
dc.description.sponsorship | This work was supported by the International Collaborative Energy Technology R&D Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP), granted financial resource from the Ministry of Trade, Industry & Energy (MOTIE) (No. 20168520011370), and by Ansan-Si hidden champion fostering and supporting project funded by Ansan city. This research was also supported by a grant from the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (NRF-2016R1A1A1A05005038). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | ELSEVIER SCIENCE SA | en_US |
dc.subject | QDSSCs | en_US |
dc.subject | Atomic layer deposition | en_US |
dc.subject | Zinc sulfide | en_US |
dc.subject | Interfacial layer | en_US |
dc.subject | Quantum dots loading | en_US |
dc.title | Enhanced PbS quantum dot loading on TiO2 photoanode using atomic-layer-deposited ZnS interfacial layer for quantum dot-sensitized solar cells | en_US |
dc.type | Article | en_US |
dc.relation.volume | 220 | - |
dc.identifier.doi | 10.1016/j.matchemphys.2018.09.006 | - |
dc.relation.page | 293-298 | - |
dc.relation.journal | MATERIALS CHEMISTRY AND PHYSICS | - |
dc.contributor.googleauthor | Basit, Muhammad Abdul | - |
dc.contributor.googleauthor | Abbas, Muhammad Awais | - |
dc.contributor.googleauthor | Jung, Eun Sun | - |
dc.contributor.googleauthor | Ali, Ijaz | - |
dc.contributor.googleauthor | Kim, Dae Woong | - |
dc.contributor.googleauthor | Bang, Jin Ho | - |
dc.contributor.googleauthor | Park, Tae Joo | - |
dc.relation.code | 2018001257 | - |
dc.sector.campus | S | - |
dc.sector.daehak | GRADUATE SCHOOL[S] | - |
dc.sector.department | DEPARTMENT OF BIONANOTECHNOLOGY | - |
dc.identifier.pid | jbang | - |
dc.identifier.researcherID | A-4850-2016 | - |
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