Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김은규 | - |
dc.date.accessioned | 2019-12-09T06:02:55Z | - |
dc.date.available | 2019-12-09T06:02:55Z | - |
dc.date.issued | 2018-09 | - |
dc.identifier.citation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 18, no. 9, page. 6239-6243 | en_US |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.issn | 1533-4899 | - |
dc.identifier.uri | https://www.ingentaconnect.com/content/asp/jnn/2018/00000018/00000009/art00068;jsessionid=4fh1u88nfu7jb.x-ic-live-03 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/120103 | - |
dc.description.abstract | We studied defect states in In0.53Ga0.47As/InP heterojunctions with interface control by group V atoms during metalorganic chemical vapor (MOCVD) deposition. From deep level transient spectroscopy (DLTS) measurements, two defects with activation energies of 0.28 eV (E1) and 0.15 eV (E2) below the conduction band edge, were observed. The defect density of E1 for In0.53Ga0.47As/InP heterojunctions with an addition of As and P atoms was about 1.5 times higher than that of the heterojunction added P atom only. From the temperature dependence of current-voltage characteristics, the thermal activation energies of In0.53Ga0.47As/InP of heterojunctions were estimated to be 0.27 and 0.25 eV, respectively. It appeared that the reverse light current for In0.53Ga0.47As/InP heterojunction added P atom increased only by illumination of a 940 nm-LED light source. These results imply that only the P addition at the interface can enhance the quality of InGaAs/InP heterojunction. | en_US |
dc.description.sponsorship | This work was supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry, and Energy (MOTIE) of the Republic of Korea (No. 20163030013380). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | en_US |
dc.subject | Metalorganic Chemical Vapor Deposition | en_US |
dc.subject | InGaAs/InP | en_US |
dc.subject | Defect States | en_US |
dc.title | Defect States in InP/InGaAs/InP Heterostructures by Current-Voltage Characteristics and Deep Level Transient Spectroscopy | en_US |
dc.type | Article | en_US |
dc.relation.no | 9 | - |
dc.relation.volume | 18 | - |
dc.identifier.doi | 10.1166/jnn.2018.15625 | - |
dc.relation.page | 6239-6243 | - |
dc.relation.journal | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.contributor.googleauthor | Thi Kim Oanh Vu | - |
dc.contributor.googleauthor | Lee, Kyoung Su | - |
dc.contributor.googleauthor | Lee, Sang Jun | - |
dc.contributor.googleauthor | Kim, Eun Kyu | - |
dc.relation.code | 2018011853 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF NATURAL SCIENCES[S] | - |
dc.sector.department | DEPARTMENT OF PHYSICS | - |
dc.identifier.pid | ek-kim | - |
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