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dc.contributor.author김태환-
dc.date.accessioned2019-12-08T20:48:04Z-
dc.date.available2019-12-08T20:48:04Z-
dc.date.issued2018-09-
dc.identifier.citationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 18, no. 9, page. 6014-6016en_US
dc.identifier.issn1533-4880-
dc.identifier.issn1533-4899-
dc.identifier.urihttps://www.ingentaconnect.com/content/asp/jnn/2018/00000018/00000009/art00030;jsessionid=1bgw83br32l2q.x-ic-live-01-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/119968-
dc.description.abstractCarrier transport mechanisms via a high-k gate dielectric material of hafnium dioxide (HfO2) between III-V GaAs were investigated by using a non-equilibrium Green's function (NEGF). The full band structure for the HfO2 layer was determined by using a sp(3)d(5)s* closest neighbor empirical tight-binding model. The band structure of the GaAs bulk was determined by using an empirical tight-binding model. The tunneling currents dependent on the thickness of the HfO2 layer with a GaAs layer were obtained by solving the NEGF in an open boundary condition. The applied voltage to obtain the tunneling currents through the HfO2 layer between the GaAs layers was higher than that for the SiHfO2/Si structure. This was due to the much smaller energy difference between the conduction band edge (E-c) and the Fermi level (E-f) of the Si layer than that of the GaAs layer. The GaAs/HfO2/GaAs structure showed an increase in the leakage current in comparison with the Si/HfO2/Si structure.en_US
dc.description.sponsorshipThis research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science, and Technology (2016R1A2A1A05005502).en_US
dc.language.isoen_USen_US
dc.publisherAMER SCIENTIFIC PUBLISHERSen_US
dc.subjectTunneling Currenten_US
dc.subjectLeakage Currenten_US
dc.subjectGaAsen_US
dc.subjectHfO2en_US
dc.subjectTight Binding Methoden_US
dc.titleCarrier Transport Mechanism via a High-k HfO2 Thin Layer Between GaAs Layersen_US
dc.typeArticleen_US
dc.relation.no9-
dc.relation.volume18-
dc.identifier.doi10.1166/jnn.2018.15576-
dc.relation.page6014-6016-
dc.relation.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY-
dc.contributor.googleauthorAhn, Joonsung-
dc.contributor.googleauthorKim, Tae Whan-
dc.relation.code2018011853-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidtwk-
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COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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