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dc.contributor.author장재영-
dc.date.accessioned2019-12-08T18:34:21Z-
dc.date.available2019-12-08T18:34:21Z-
dc.date.issued2018-08-
dc.identifier.citationACS NANO, v. 12, no. 8, page. 7701-7709en_US
dc.identifier.issn1936-0851-
dc.identifier.issn1936-086X-
dc.identifier.urihttps://pubs.acs.org/doi/10.1021/acsnano.8b09242-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/119642-
dc.description.abstractPhotoresponsive transistor memories that can be erased using light-only bias are of significant interest owing to their convenient elimination of stored data for information delivery. Herein, we suggest a strategy to improve light-erasable organic transistor memories, which enables fast "photoinduced recovery" under low-intensity light. CdSe quantum dots (QDs) whose surfaces are covered with three different organic molecules are introduced as photoactive floating-gate interlayers in organic transistor memories. We determine that CdSe QDs capped or surface-modified with small molecular ligands lead to efficient hole diffusion from the QDs to the conducting channel during "photoinduced recovery", resulting in faster erasing times. In particular, the memories with QDs surface-modified with fluorinated molecules function as normally-ON type transistor memories with nondestructive operation. These memories exhibit high memory ratios over 10(5) between OFF and ON bistable current states for over 10 000 s and good dynamic switching behavior with voltage-driven programming processes and light-assisted erasing processes within 1 s. Our study provides a useful guideline for designing photoactive floating-gate materials to achieve desirable properties of light-erasable organic transistor memories.en_US
dc.description.sponsorshipThis research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2018R1D1A1A02050420).en_US
dc.language.isoen_USen_US
dc.publisherAMER CHEMICAL SOCen_US
dc.subjectquantum dotsen_US
dc.subjectsurface ligandsen_US
dc.subjectphotoinduced recoveryen_US
dc.subjectoptical memoriesen_US
dc.subjectorganic field-effect transistorsen_US
dc.subjectnormally-ON typeen_US
dc.subjectnondestructiveen_US
dc.titleSurface Modification of CdSe Quantum-Dot Floating Gates for Advancing Light-Erasable Organic Field-Effect Transistor Memoriesen_US
dc.typeArticleen_US
dc.relation.no8-
dc.relation.volume12-
dc.relation.page7701-7709-
dc.relation.journalACS NANO-
dc.contributor.googleauthorJeong, Yong Jin-
dc.contributor.googleauthorYun, Dong-Jin-
dc.contributor.googleauthorNoh, Sung Hoon-
dc.contributor.googleauthorPark, Chan Eon-
dc.contributor.googleauthorJang, Jaeyoung-
dc.relation.code2018000602-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ENERGY ENGINEERING-
dc.identifier.pidjyjang15-
dc.identifier.orcidhttp://orcid.org/0000-0002-5548-8563-
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COLLEGE OF ENGINEERING[S](공과대학) > ENERGY ENGINEERING(에너지공학과) > Articles
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