Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김은규 | - |
dc.date.accessioned | 2019-12-08T10:58:56Z | - |
dc.date.available | 2019-12-08T10:58:56Z | - |
dc.date.issued | 2018-06 | - |
dc.identifier.citation | NANOMATERIALS, v. 8, no. 6, Article no. 397 | en_US |
dc.identifier.issn | 2079-4991 | - |
dc.identifier.uri | https://www.mdpi.com/2079-4991/8/6/397 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/119132 | - |
dc.description.abstract | We investigate the electrical characteristics of Schottky contacts for an Au/hydride vapor phase epitaxy (HVPE) a-plane GaN template grown via in situ GaN nanodot formation. Although the Schottky diodes present excellent rectifying characteristics, their Schottky barrier height and ideality factor are highly dependent upon temperature variation. The relationship between the barrier height, ideality factor, and conventional Richardson plot reveals that the Schottky diodes exhibit an inhomogeneous barrier height, attributed to the interface states between the metal and a-plane GaN film and to point defects within the a-plane GaN layers grown via in situ nanodot formation. Also, we confirm that the current transport mechanism of HVPE a-plane GaN Schottky diodes grown via in situ nanodot formation prefers a thermionic field emission model rather than a thermionic emission (TE) one, implying that Poole-Frenkel emission dominates the conduction mechanism over the entire range of measured temperatures. The deep-level transient spectroscopy (DLTS) results prove the presence of noninteracting point-defect-assisted tunneling, which plays an important role in the transport mechanism. These electrical characteristics indicate that this method possesses a great throughput advantage for various applications, compared with Schottky contact to a-plane GaN grown using other methods. We expect that HVPE a-plane GaN Schottky diodes supported by in situ nanodot formation will open further opportunities for the development of nonpolar GaN-based high-performance devices. | en_US |
dc.description.sponsorship | This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2016R1A6A1A03012069), the Korea Institute of Energy Technology Evaluation and Planning (KETEP), and the Ministry of Trade, Industry, & Energy (MOTIE) of the Republic of Korea (No. 20163030013380). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | MDPI | en_US |
dc.subject | nanodot | en_US |
dc.subject | a-plane GaN | en_US |
dc.subject | HVPE | en_US |
dc.subject | Schottky diodes | en_US |
dc.title | Electronic Transport Mechanism for Schottky Diodes Formed by Au/HVPE a-Plane GaN Templates Grown via In Situ GaN Nanodot Formation | en_US |
dc.type | Article | en_US |
dc.relation.no | 6 | - |
dc.relation.volume | 8 | - |
dc.identifier.doi | 10.3390/nano8060397 | - |
dc.relation.page | 397-405 | - |
dc.relation.journal | NANOMATERIALS | - |
dc.contributor.googleauthor | Lee, Moonsang | - |
dc.contributor.googleauthor | Thi Kim Oanh Vu | - |
dc.contributor.googleauthor | Lee, Kyoung Su | - |
dc.contributor.googleauthor | Kim, Eun Kyu | - |
dc.contributor.googleauthor | Park, Sungsoo | - |
dc.relation.code | 2018003999 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF NATURAL SCIENCES[S] | - |
dc.sector.department | DEPARTMENT OF PHYSICS | - |
dc.identifier.pid | ek-kim | - |
dc.identifier.orcid | http://orcid.org/0000-0003-3373-963X | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.