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Exploring oxygen-affinity-controlled TaN electrodes for thermally advanced TaOx bipolar resistive switching

Title
Exploring oxygen-affinity-controlled TaN electrodes for thermally advanced TaOx bipolar resistive switching
Author
김태윤
Keywords
INSULATOR-METAL CAPACITORS; THIN-FILMS; MEMORY; MECHANISM; IMPROVEMENT
Issue Date
2018-06
Publisher
NATURE PUBLISHING GROUP
Citation
SCIENTIFIC REPORTS, v. 8, Article no. 8532
Abstract
Recent advances in oxide-based resistive switching devices have made these devices very promising candidates for future nonvolatile memory applications. However, several key issues remain that affect resistive switching. One is the need for generic alternative electrodes with thermally robust resistive switching characteristics in as-grown and high-temperature annealed states. Here, we studied the electrical characteristics of Ta2O5-x, oxide-based bipolar resistive frames for various TaNx bottoms. Control of the nitrogen content of the TaNx, electrode is a key factor that governs variations in its oxygen affinity and structural phase. We analyzed the composition and chemical bonding states of as-grown and annealed Ta2O5-x and Tall. layers and characterized the TaNx electrode-dependent switching behavior in terms of the electrode's oxygen affinity. Our experimental findings can aid the development of advanced resistive switching devices with thermal stability up to 400 degrees C.
URI
https://www.nature.com/articles/s41598-018-26997-yhttps://repository.hanyang.ac.kr/handle/20.500.11754/119128
ISSN
2045-2322
DOI
10.1038/s41598-018-26997-y
Appears in Collections:
RESEARCH INSTITUTE[S](부설연구소) > THE RESEARCH INSTITUTE FOR NATURAL SCIENCES(자연과학연구소) > Articles
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