Ca-Doped CuO Diffusion Barrier for High-Performance a-IGZO Transistors With Cu-Based Source/Drain Material
- Title
- Ca-Doped CuO Diffusion Barrier for High-Performance a-IGZO Transistors With Cu-Based Source/Drain Material
- Author
- 정재경
- Keywords
- Amorphous InGaZnO (a-IGZO); Cu-Ca alloy; diffusion barrier; high mobility; stability; thin-film transistors (TFTs)
- Issue Date
- 2018-04
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v. 65, no. 4, page. 1383-1390
- Abstract
- A thermally stable Ca-doped CuOx (CuCaOx) diffusion barrier to prevent the migration of Cu to amorphous InGaZnO (a-IGZO) was developed by reactive sputtering and subsequent annealing. Insertion of a 5-nm-thick CaCuOx between the Ca-dopedCu (CuCa) and a-IGZO channel films in the source/drain contact regions provided the resulting transistors with superior charge transport and lower trap density compared to the diffusion barrier-free CuCa/a-IGZO transistors. The fabricated a-IGZO transistors with the CuCa/CuCaOx stack contact exhibited a high mobility of 20.8 cm(2)/V.s and an Ion/off ratio of 108. Simultaneously, very stable behavior against the external positive/negate gate bias stress was observed for the a-IGZO thin-film transistors with the CuCa/CuCaOx stack contact. This was attributed to suppression of Cu-related acceptor-like traps due to the conformal formation of CuCaOx film with excellent barrier properties.
- URI
- https://ieeexplore.ieee.org/document/8305651https://repository.hanyang.ac.kr/handle/20.500.11754/118485
- ISSN
- 0018-9383; 1557-9646
- DOI
- 10.1109/TED.2018.2806362
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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