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dc.contributor.author신동수-
dc.date.accessioned2019-12-07T20:41:24Z-
dc.date.available2019-12-07T20:41:24Z-
dc.date.issued2018-04-
dc.identifier.citationIEEE JOURNAL OF QUANTUM ELECTRONICS, v. 54, no. 2, Article no. 8000106en_US
dc.identifier.issn0018-9197-
dc.identifier.issn1558-1713-
dc.identifier.urihttps://ieeexplore.ieee.org/document/8263237-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/118441-
dc.description.abstractWe present a method of measuring the internal quantum efficiency (IQE) of light-emitting diodes (LEDs) as a function of driving current at an arbitrary temperature only with experimentally measurable quantities of optical power and current. The measurement procedure starts to find an exact value of the IQE at the reference point where the injection efficiency is considered as 100% and the radiative efficiency is calculated from the infinitesimal change of the relative external quantum efficiency (EQE). Once the IQE at the reference point is exactly known, the IQE at any other point is calculated by the relative ratio of the EQE values to the reference one. We show the theoretical formalism of the proposed method and demonstrate its validity using a commercial InGaN blue LED as an example. The comparison with the IQE obtained by the conventional temperature-dependent electroluminescence is also given for various temperatures.en_US
dc.description.sponsorshipThis work was supported by the Technology Innovation Program (Industrial Strategic Technology Development Program-Development of commercialized technologies for performance and failure analyses of chip-or wafer-level light-emitting diodes) through the Ministry of Trade, Industry and Energy, Republic of Korea, under Program 10032099. (Corresponding author: Dong-Soo Shin.)en_US
dc.language.isoen_USen_US
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INCen_US
dc.subjectInternal quantum efficiencyen_US
dc.subjectlight-emitting diodeen_US
dc.subjectinjection efficiencyen_US
dc.subjectexternal quantum efficiencyen_US
dc.subjectreference pointen_US
dc.titleMeasuring the Internal Quantum Efficiency of Light-Emitting Diodes at an Arbitrary Temperatureen_US
dc.typeArticleen_US
dc.relation.no2-
dc.relation.volume54-
dc.identifier.doi10.1109/JQE.2018.2795044-
dc.relation.page1-6-
dc.relation.journalIEEE JOURNAL OF QUANTUM ELECTRONICS-
dc.contributor.googleauthorShim, Jong-In-
dc.contributor.googleauthorHan, Dong-Pyo-
dc.contributor.googleauthorOh, Chan-Hyoung-
dc.contributor.googleauthorJung, Hyundon-
dc.contributor.googleauthorShin, Dong-Soo-
dc.relation.code2018002538-
dc.sector.campusS-
dc.sector.daehakGRADUATE SCHOOL[S]-
dc.sector.departmentDEPARTMENT OF BIONANOTECHNOLOGY-
dc.identifier.piddshin-
dc.identifier.researcherIDF-6402-2010-
dc.identifier.orcidhttp://orcid.org/0000-0002-0863-9138-
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GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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