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Effect of a Trap Zone in Reducing Nanoparticle Contamination of Wafers and Photomasks in Parallel Airflowp

Title
Effect of a Trap Zone in Reducing Nanoparticle Contamination of Wafers and Photomasks in Parallel Airflowp
Author
육세진
Keywords
Particle contamination; nanoparticles; deposition velocity; wafer; photomask; thermophoresis
Issue Date
2018-02
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, v. 31, no. 1, page. 87-96
Abstract
Particle contamination control is important for increasing the yield in semiconductor manufacturing. In this paper, a trap zone was suggested to reduce the level of particulate contamination of wafers and photomasks during transport in horizontal direction. Trap zone efficiency was numerically and theoretically analyzed by calculating local deposition velocity onto a critical surface representing a wafer or a photomask. The effects of diffusion, gravitational settling, convection, and thermophoresis on particle behavior were considered. The deposition velocity onto the critical surface was found to be effectively reduced with the use of the trap zone, especially for nanoparticles of large diffusivity. As the trap zone became longer, the degree of critical surface contamination by nanoparticles was estimated to be more reduced. An equation was suggested to estimate the reduction of particulate contamination of the critical surface as a function of the trap zone length. It is anticipated that the results of this paper are very helpful for designing wafer/photomask transport systems with a reduced level of contamination by nanoparticles.
URI
https://ieeexplore.ieee.org/document/8057283https://repository.hanyang.ac.kr/handle/20.500.11754/117643
ISSN
0894-6507; 1558-2345
DOI
10.1109/TSM.2017.2759091
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MECHANICAL ENGINEERING(기계공학부) > Articles
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