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dc.contributor.author송석호-
dc.date.accessioned2019-12-04T04:11:38Z-
dc.date.available2019-12-04T04:11:38Z-
dc.date.issued2018-01-
dc.identifier.citationNATURE ELECTRONICS, v. 1, no. 1, page. 60-67en_US
dc.identifier.issn2520-1131-
dc.identifier.urihttps://www.nature.com/articles/s41928-017-0007-7-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/117115-
dc.description.abstractAdvances in nanophotonics and plasmonics have led to the creation of a variety of innovative optical components and devices. However, the development of powerful practical applications has so far been limited. Here we show that subsurface defects in three-dimensional NAND flash memory devices can be identified by exploiting the inherent hyperbolic metamaterial structure of the devices and associated nanophotonic interactions, such as the epsilon-near-zero effect and hyperbolic Bloch mode formation. By incorporating a hyperspectral imaging scheme into an industrial optical inspection tool, we experimentally demonstrate that a diffraction-assisted volume-plasmonic resonance provides a robust mechanism for identifying subsurface defects at a depth that is around ten times deeper than the conventional optical skin depth limit. Further spectral analysis in the longer-wavelength infrared region shows clear hyperbolic guided-mode-resonance signatures that would potentially allow defect identification over the entire device depth and on the scale of multiple micrometres.en_US
dc.description.sponsorshipThis work was supported by the i-TAP (Innovative-Technology Advancement Program) of SK hynix Inc. We thank S. J. Moon and G. Ahn for providing us with the FTIR spectrum analyser and associated discussions.en_US
dc.language.isoen_USen_US
dc.publisherNATURE PUBLISHING GROUPen_US
dc.subjectLIGHTen_US
dc.subjectTRANSMISSIONen_US
dc.titleNanophotonic identification of defects buried in three-dimensional NAND flash memory devicesen_US
dc.typeArticleen_US
dc.relation.no1-
dc.relation.volume1-
dc.identifier.doi10.1038/s41928-017-0007-7-
dc.relation.page60-67-
dc.relation.journalNature Electronics-
dc.contributor.googleauthorYoon, Jae Woong-
dc.contributor.googleauthorMa, Seong-Min-
dc.contributor.googleauthorKim, Gun Pyo-
dc.contributor.googleauthorKang, Yoonshik-
dc.contributor.googleauthorHahn, Joonseong-
dc.contributor.googleauthorKwon, Oh-Jang-
dc.contributor.googleauthorKim, Kyuyoung-
dc.contributor.googleauthorSong, Seok Ho-
dc.relation.code2018044903-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF NATURAL SCIENCES[S]-
dc.sector.departmentDEPARTMENT OF PHYSICS-
dc.identifier.pidshsong-
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COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
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