Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 송석호 | - |
dc.date.accessioned | 2019-12-04T04:11:38Z | - |
dc.date.available | 2019-12-04T04:11:38Z | - |
dc.date.issued | 2018-01 | - |
dc.identifier.citation | NATURE ELECTRONICS, v. 1, no. 1, page. 60-67 | en_US |
dc.identifier.issn | 2520-1131 | - |
dc.identifier.uri | https://www.nature.com/articles/s41928-017-0007-7 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/117115 | - |
dc.description.abstract | Advances in nanophotonics and plasmonics have led to the creation of a variety of innovative optical components and devices. However, the development of powerful practical applications has so far been limited. Here we show that subsurface defects in three-dimensional NAND flash memory devices can be identified by exploiting the inherent hyperbolic metamaterial structure of the devices and associated nanophotonic interactions, such as the epsilon-near-zero effect and hyperbolic Bloch mode formation. By incorporating a hyperspectral imaging scheme into an industrial optical inspection tool, we experimentally demonstrate that a diffraction-assisted volume-plasmonic resonance provides a robust mechanism for identifying subsurface defects at a depth that is around ten times deeper than the conventional optical skin depth limit. Further spectral analysis in the longer-wavelength infrared region shows clear hyperbolic guided-mode-resonance signatures that would potentially allow defect identification over the entire device depth and on the scale of multiple micrometres. | en_US |
dc.description.sponsorship | This work was supported by the i-TAP (Innovative-Technology Advancement Program) of SK hynix Inc. We thank S. J. Moon and G. Ahn for providing us with the FTIR spectrum analyser and associated discussions. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | NATURE PUBLISHING GROUP | en_US |
dc.subject | LIGHT | en_US |
dc.subject | TRANSMISSION | en_US |
dc.title | Nanophotonic identification of defects buried in three-dimensional NAND flash memory devices | en_US |
dc.type | Article | en_US |
dc.relation.no | 1 | - |
dc.relation.volume | 1 | - |
dc.identifier.doi | 10.1038/s41928-017-0007-7 | - |
dc.relation.page | 60-67 | - |
dc.relation.journal | Nature Electronics | - |
dc.contributor.googleauthor | Yoon, Jae Woong | - |
dc.contributor.googleauthor | Ma, Seong-Min | - |
dc.contributor.googleauthor | Kim, Gun Pyo | - |
dc.contributor.googleauthor | Kang, Yoonshik | - |
dc.contributor.googleauthor | Hahn, Joonseong | - |
dc.contributor.googleauthor | Kwon, Oh-Jang | - |
dc.contributor.googleauthor | Kim, Kyuyoung | - |
dc.contributor.googleauthor | Song, Seok Ho | - |
dc.relation.code | 2018044903 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF NATURAL SCIENCES[S] | - |
dc.sector.department | DEPARTMENT OF PHYSICS | - |
dc.identifier.pid | shsong | - |
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