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Sulfur-Enhanced Field-Effect Passivation using (NH4)2S Surface Treatment for Black Si Solar Cells

Title
Sulfur-Enhanced Field-Effect Passivation using (NH4)2S Surface Treatment for Black Si Solar Cells
Author
이정호
Keywords
black Si; Si photovoltaics; field-effect passivation; S passivation; (NH4)(2)S
Issue Date
2019-06
Publisher
AMER CHEMICAL SOC
Citation
ACS APPLIED MATERIALS & INTERFACES, v. 11, No. 28, Page. 25140-25146
Abstract
We demonstrated surface passivation of a black Si-based solar cell using an (NH4)(2)S solution to mitigate surface recombination velocity. Incorporated S at the interface between atomic-layer-deposited Al2O3 and black Si by (NH4)(2)S solution treatment boosted the density of negative fixed charges, S-enhanced field-effect passivation. Furthermore, NH4OH generated during (NH4)(2)S solution treatment removed the defective Si phase at the black Si surface, the surface cleaning effect. The optimized (NH4)(2)S solution treatment significantly enhanced the internal quantum efficiency up to similar to 17.2% in the short wavelength region, suggesting suppressed surface recombination. As a result, photoconversion efficiency of the cell increased from 11.6 to 13.5%, by 16% compared to the control cells without (NH4)(2)S solution treatment.
URI
https://pubs.acs.org/doi/10.1021/acsami.9b05589https://repository.hanyang.ac.kr/handle/20.500.11754/116561
ISSN
1944-8244; 1944-8252
DOI
10.1021/acsami.9b05589
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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