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High power conversion efficiency of intermediate band photovoltaic solar cell based on Cr-doped ZnTe

Title
High power conversion efficiency of intermediate band photovoltaic solar cell based on Cr-doped ZnTe
Author
김은규
Keywords
Intermediate band solar cell; ZnTe:Cr; Pulsed laser deposition
Issue Date
2017-10
Publisher
ELSEVIER SCIENCE BV
Citation
SOLAR ENERGY MATERIALS AND SOLAR CELLS, v. 170, page. 27-32
Abstract
We report on a high-performance intermediate band solar cell (IBSC) based on Cr-doped ZnTe (ZnTe:Cr) fabricated using a pulsed laser deposition (PLD) method. Chromium (Cr) was uniformly distributed in the ZnTe:Cr thin film with an atomic concentration of about 3.5%, and the ZnTe:Cr thin film showed p-type electrical conductivity. The ZnTe:Cr thin film had higher absorption coefficients than those of undoped ZnTe films in the photon energy range below band gap of ZnTe (2.2 eV). The enhanced absorption coefficients of the ZnTe:Cr thin film were attributed to the photoionization energy between Cr2+ and Cr+ (Cr2+ reversible arrow Cr+), which acted as the IB to absorb photons below the bandgap of ZnTe (2.2 eV). Illumination with an AM 1.5G solar spectrum on the ZnTe:Cr IBSC generated a large short circuit current of 21.18 mA/cm(2), an open circuit voltage of 0.48 V, and a fill factor of 0.58, yielding a power conversion efficiency (PCE) of 5.9%, the highest reported PCE in an IBSC based on impurity-doped ZnTe.
URI
https://www.sciencedirect.com/science/article/pii/S0927024817302362?via%3Dihubhttps://repository.hanyang.ac.kr/handle/20.500.11754/115967
ISSN
0927-0248; 1879-3398
DOI
10.1016/j.solmat.2017.05.020
Appears in Collections:
COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
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