Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김은규 | - |
dc.date.accessioned | 2019-11-30T07:23:16Z | - |
dc.date.available | 2019-11-30T07:23:16Z | - |
dc.date.issued | 2017-09 | - |
dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, v. 122, no. 12, Article no. 124505 | en_US |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.issn | 1089-7550 | - |
dc.identifier.uri | https://aip.scitation.org/doi/10.1063/1.4994740 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/115449 | - |
dc.description.abstract | We investigated a vertically stacked p(+)-n heterojunction diode consisting of a two-dimensional (2D) molybdenum disulfide (MoS2) crystal and a heavily doped p(+)-type Si substrate. The MoS2 flakes are transferred onto p(+)-Si substrates by using a scotch tape-based exfoliation method. The performances of n-MoS2/p(+)-Si diodes are investigated by I-V measurement under light illumination using light emitting diodes with various wavelengths. It appears that multilayer MoS2 has sufficient thickness to absorb incident light from the visible to near-infrared range with a high sensitivity. With the advantages of a simple device structure as well as improved contact quality between the MoS2 and silicon interface, an ideality factor of 1.09 can be achieved. The diodes reveal an ultra-high photoresponsivity of about 980 A/W at a wavelength of 525 nm with a strong dependence on the light wavelength and intensity, while they show a high specific detectivity on the order of 10(9) cm.Hz(1/2/)W from the visible to near infrared spectral ranges. Published by AIP Publishing. | en_US |
dc.description.sponsorship | This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Government (MSIP) (No. NRF-2016R1A2B4011706). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | AMER INST PHYSICS | en_US |
dc.subject | HIGH-RESPONSIVITY | en_US |
dc.subject | HIGH-DETECTIVITY | en_US |
dc.subject | PHOTOTRANSISTORS | en_US |
dc.subject | DRIVEN | en_US |
dc.subject | WS2 | en_US |
dc.title | High photoresponsivity from multilayer MoS2/Si heterojunction diodes formed by vertically stacking | en_US |
dc.type | Article | en_US |
dc.relation.no | 12 | - |
dc.relation.volume | 122 | - |
dc.identifier.doi | 10.1063/1.4994740 | - |
dc.relation.page | 124505-124509 | - |
dc.relation.journal | JOURNAL OF APPLIED PHYSICS | - |
dc.contributor.googleauthor | Song, Da Ye | - |
dc.contributor.googleauthor | Chu, Dongil | - |
dc.contributor.googleauthor | Lee, Seung Kyo | - |
dc.contributor.googleauthor | Pak, Sang Woo | - |
dc.contributor.googleauthor | Kim, Eun Kyu | - |
dc.relation.code | 2017003713 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF NATURAL SCIENCES[S] | - |
dc.sector.department | DEPARTMENT OF PHYSICS | - |
dc.identifier.pid | ek-kim | - |
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